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WSF128K16-37H1MA

Description
128K X 16 SRAM /FLASH MODULE SMD 5962-96900
File Size442KB,15 Pages
ManufacturerETC
Download Datasheet View All

WSF128K16-37H1MA Overview

128K X 16 SRAM /FLASH MODULE SMD 5962-96900

WSF128K16-XXX
128Kx16 SRAM/FLASH MODULE, SMD 5962-96900
FEATURES
n
n
n
Access Times of 35ns (SRAM) and 70ns (FLASH)
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Access Times of 70ns (SRAM) and 120ns (FLASH)
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Packaging
• 66-pin, PGA Type, 1.075 inch square HIP, Hermetic
Ceramic HIP (Package 400)
• 66-pin, PGA Type, 1.185 inch square HIP, Hermetic
Ceramic HIP (Package 401)
• 68 lead, Hermetic CQFP (G1U), 22.4mm (0.880
inch) square (Package 519). Designed to fit JEDEC
68 lead 0.990” CQFJ footprint (Fig. 2)
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128Kx16 SRAM
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128Kx16 5V FLASH
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Organized as 128Kx16 of SRAM and 128Kx16 of Flash
Memory with separate Data Buses
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Both blocks of memory are User Configurable as
256Kx8
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Low Power CMOS
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Commercial, Industrial and Military Temperature Ranges
n
TTL Compatible Inputs and Outputs
n
n
n
n
Built-in Decoupling Caps and Multiple Ground Pins for
Low Noise Operation
Weight
• WSF128K16-XHX - 13 grams typical
• WSF128K16-H1X - 13 grams typical
• WSF128K16-XG1UX - 5 grams typical
FLASH MEMORY FEATURES
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10,000 Erase/Program Cycles
Sector Architecture
• 8 equal size sectors of 16K bytes each
• Any combination of sectors can be concurrently
erased.
Also supports full chip erase
5 Volt Programming; 5V ± 10% Supply
Embedded Erase and Program Algorithms
Hardware Write Protection
Page Program Operation and Internal Program Control
Time.
Note: For programming information refer to Flash Programming 1M5
Application Note.
F
IG
.1
P
IN
C
ONFIGURATION
F
OR
WSF128K16-XHX A
ND
WSF128K16-XH1X
T
OP
V
IEW
FD
0-15
SD
0-15
A
0-16
SWE
1-2
SCS
1-2
OE
V
CC
GND
NC
FWE
1-2
FCS
1-2
P
IN
D
ESCRIPTION
Flash Data Inputs/Outputs
SRAM Data Inputs/Outputs
Address Inputs
SRAM Write Enable
SRAM Chip Selects
Output Enable
Power Supply
Ground
Not Connected
Flash Write Enable
Flash Chip Select
B
LOCK
D
IAGRAM
May 2001 Rev. 5
1
White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com
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