BZX79C5V1.TR datasheet, PDF - EEWORLD Datasheet

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BZX79C5V1.TR: DescriptionZener Diode, 5.1V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35; CategoryDiscrete semiconductor diode; File Size21KB，2 Pages; ManufacturerFairchild; Websitehttp://www.fairchildsemi.com/

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BZX79C5V1.TR Overview

Zener Diode, 5.1V V(Z), 5%, 0.5W, Silicon, Unidirectional, DO-35

BZX79C5V1.TR Parametric

Parameter Name	Attribute value
package instruction	O-PALF-W2
Reach Compliance Code	unknow
ECCN code	EAR99
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
JEDEC-95 code	DO-35
JESD-30 code	O-PALF-W2
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	LONG FORM
polarity	UNIDIRECTIONAL
Maximum power dissipation	0.5 W
Certification status	Not Qualified
Nominal reference voltage	5.1 V
surface mount	NO
technology	ZENER
Terminal form	WIRE
Terminal location	AXIAL
Maximum voltage tolerance	5%
Working test current	5 mA
Base Number Matches	1

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BZX79C 3V3 - BZX79C 33 Series

Discrete POWER & Signal

Technologies

BZX79C 3V3 - 33 Series Half Watt Zeners

Absolute Maximum Ratings*

Parameter

Storage Temperature Range

Maximum Junction Operating Temperature

Lead Temperature (1/16” from case for 10 seconds)

Total Device Dissipation

Derate above 25°C

Surge Power**

TA = 25°C unless otherwise noted

Tolerance: C = 5%

Value

-65 to +200

+ 200

+ 230

500

4.0

Units

°C

mW/°C

These ratings are limiting values above which the serviceability of the diode may be impaired.

Non-recurrent square wave PW= 8.3 ms, TA= 50 degrees C.

NOTES:

These ratings are based on a maximum junction temperature of 200 degrees C.

These are steady state limits. The factory should be consulted on applications involving pulsed

or low duty cycle operations.

DO-35

Electrical Characteristics

Device

MIN

BZX79C 3V3

BZX79C 3V6

BZX79C 3V9

BZX79C 4V3

BZX79C 4V7

BZX79C 5V1

BZX79C 5V6

BZX79C 6V2

BZX79C 6V8

BZX79C 7V5

BZX79C 8V2

BZX79C 9V1

BZX79C 10

BZX79C 11

BZX79C 12

BZX79C 13

BZX79C 15

BZX79C 16

BZX79C 18

BZX79C 20

BZX79C 22

BZX79C 24

BZX79C 27

BZX79C 30

BZX79C 33

3.1

3.4

3.7

4.0

4.4

4.8

5.2

5.8

6.4

7.0

7.7

8.5

9.4

10.4

11.4

12.4

13.8

15.3

16.8

18.8

20.8

22.8

25.1

TA = 25°C unless otherwise noted

(V)

MAX

3.5

3.8

4.1

4.6

5.0

5.4

6.0

6.6

7.2

7.9

8.7

9.6

10.6

11.6

12.7

14.1

15.6

17.1

19.1

21.2

23.3

25.6

28.9

(Ω)

(mA)

5.0

2.0

(Ω)

600

500

480

400

150

100

150

170

200

225

250

300

325

(mA)

1.0

0.5

(V)

1.0

2.0

4.0

5.0

6.0

7.0

8.0

10.5

11.2

12.6

15.4

16.8

18.9

23.1

(µA)

5.0

3.0

2.0

1.0

3.0

2.0

1.0

0.7

0.5

0.2

0.1

0.10

0.05

(mV/°C)

MIN

MAX

- 3.5

- 2.7

- 2.0

+ 0.4

+ 1.2

+ 2.5

+ 3.2

+ 3.8

+ 4.5

+ 5.4

+ 6.0

- 7.0

- 9.2

+ 10.4

+ 12.4

+ 14.4

+ 16.4

+ 18.4

+ 21.4

+ 24.4

+ 27.4

0.0

+ 0.3

+ 1.0

+ 0.2

+ 1.2

+ 2.5

+ 3.7

+ 4.5

+ 5.3

+ 6.2

+ 7.0

+ 8.0

+ 9.0

+ 10

+ 11

+ 13

+ 14

+ 16

+ 18

+ 20

+ 22

+ 25.3

+ 29.4

+ 33.4

Foward Voltage = 1.5 V Maximum @ I

= 100 mA for all BZX 79 series

Pulse Test: Pulse Width

300

ms,

Duty Cycle

2.0%

1997 Fairchild Semiconductor Corporation

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