CF5011 series
1.8V Crystal Oscillator Module ICs
OVERVIEW
The CF5011 series are low-voltage crystal oscillator module ICs that operate at 1.8V. The crystal oscillator cir-
cuit and output buffer employ a low-voltage CMOS process operating at 1.8V. The crystal oscillator circuit has
a built-in thin-film feedback resistor with good temperature characteristics and built-in capacitors with excel-
lent frequency response, making possible a stable 3rd-harmonic oscillator with only the addition of a crystal
element.
FEATURES
I
I
I
I
I
3rd-harmonic oscillation
1.6 to 2.0V operating supply voltage range
30 to 70MHz recommended operating frequency
range
Inverter amplifier feedback resistor built-in
Oscillator capacitors C
G
, C
D
built-in
I
I
I
I
I
Standby function
f
O
output frequency (oscillator frequency)
8mA output drive capability (V
DD
= 1.6V)
CMOS output duty level
Chip form (CF5011×××)
SERIES CONFIGURATION
Version
CF5011ALA
CF5011ALB
1
CF5011ALC
1
CF5011ALD
1
CF5011ANA
CF5011ANB
CF5011ANC
CF5011AND
1. Under development
Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.
Recommended
operating
frequency [MHz]
30 to 40
40 to 50
50 to 60
60 to 70
30 to 40
40 to 50
50 to 60
60 to 70
Built-in capacitance [pF]
gm ratio
C
G
1.0
1.0
1.0
1.5
1.0
1.0
1.0
1.5
14
8
8
8
14
8
8
8
C
D
16
16
16
16
16
16
16
16
R
f
[kΩ]
4.0
3.9
2.2
2.7
4.0
3.9
2.2
2.7
Standby function
Yes
Yes
Yes
Yes
No
No
No
No
ORDERING INFORMATION
Device
CF5011×××–1
Package
Chip form
NIPPON PRECISION CIRCUITS INC.—1
CF5011 series
PAD LAYOUT
(Unit:µm)
VDD
Q
(920,1310)
Y
(0,0) INHN XTN
XT
VSS
X
Chip size: 0.92
×
1.31 mm
Chip thickness: 300 ± 30 µm
Chip base: V
DD
level
PIN DESCRIPTION and PAD DIMENSIONS
Pad dimensions [µm]
Name
I/O
Description
X
Operation mode control input.
<CF5011AL×>
The oscillator stops and Q becomes high impedance when LOW. Power saving
pull-up resistor built in
<CF5011AN×>
Q becomes high impedance when LOW. Pull-up resistor built in
Amplifier input
Amplifier output
Ground
Output. Output frequency (f
O
). High impedance when INHN is LOW
Supply voltage
Crystal oscillator connection pins.
Crystal oscillator connected between XT and XTN
Y
INHN
I
XT
XTN
VSS
Q
VDD
I
O
–
O
–
BLOCK DIAGRAM
CF5011AL×
VDD VSS
XTN
C
G
R
f 1
C
f
C
D
XT
R
f 2
Q
XT
Q
INHN
Substrate potential: V
DD
HA5011A
195
212
385
575
766
765
162
212
212
212
1152
1152
CF5011AN×
VDD VSS
XTN
C
G
R
f 2
R
f 1
C
f
C
D
INHN
Substrate potential: V
DD
NIPPON PRECISION CIRCUITS INC.—2
CF5011 series
SPECIFICATIONS
Absolute Maximum Ratings
V
SS
= 0V
Parameter
Supply voltage range
Input voltage range
Output voltage range
Operating temperature range
Storage temperature range
Output current
Symbol
V
DD
V
IN
V
OUT
T
opr
T
stg
I
OUT
Condition
Rating
−0.5
to +3.6
−0.5
to V
DD
+ 0.5
−0.5
to V
DD
+ 0.5
−40
to +85
−65
to +150
25
Unit
V
V
V
°C
°C
mA
Recommended Operating Conditions
V
SS
= 0V, f
≤
70MHz, C
L
= 15pF unless otherwise noted.
Parameter
Supply voltage
Input voltage
Operating temperature
Symbol
V
DD
V
IN
T
OPR
Condition
Rating
min
1.6
V
SS
−20
typ
–
–
–
max
2.0
V
DD
+80
Unit
V
V
°C
Electrical Characteristics
V
DD
= 1.6 to 2.0V, V
SS
= 0V, Ta =
−20
to +80°C unless otherwise noted.
Parameter
HIGH-level output voltage
LOW-level output voltage
Output leakage current
HIGH-level input voltage
LOW-level input voltage
Current consumption
Standby current
INHN pull-up resistance
Symbol
V
OH
V
OL
I
Z
V
IH
V
IL
I
DD
I
ST
R
UP1
R
UP2
Condition
Q: Measurement cct 1, V
DD
= 1.6V, I
OH
= 8mA
Q: Measurement cct 2, V
DD
= 1.6V, I
OL
= 8mA
Q: Measurement cct 2, INHN = LOW,
V
DD
= 2.0V
INHN
INHN
Measurement cct 3, load cct 1, INHN = open, C
L
= 15pF,
f = 70MHz
Measurement cct 3, INHN = LOW
Measurement cct 4, INHN = LOW
Measurement cct 4, INHN = 0.7V
DD
CF5011AL×
CF5011AL×
CF5011AL×
CF5011AN×
V
OH
= V
DD
V
OL
= V
SS
Rating
min
1.1
–
–
–
0.7V
DD
–
–
–
0.4
50
3.20
3.12
1.76
2.16
50
9.3
13.02
7.44
14.88
14.88
typ
1.3
0.3
–
–
–
–
9
–
–
–
4.0
3.9
2.2
2.7
–
10
14
8
16
16
max
–
0.4
10
10
–
0.3V
DD
18
100
8
150
4.80
4.68
2.64
3.24
150
10.7
14.98
8.56
17.12
17.12
Unit
V
V
µA
µA
V
V
mA
µA
MΩ
kΩ
kΩ
kΩ
kΩ
kΩ
kΩ
pF
pF
pF
pF
pF
CF5011ALA, ANA
AC feedback resistance
R
f1
Design value, determined by the
internal wafer pattern
CF5011ALB, ANB
CF5011ALC, ANC
CF5011ALD, AND
DC feedback resistance
AC feedback capacitance
R
f2
C
f
C
G
Built-in capacitance
C
D
Design value, determined by the
internal wafer pattern
Measurement cct 5
Design value, determined by the internal wafer pattern
Design value, determined by the
internal wafer pattern
CF5011ALA, ANA
CF5011ALB, ALC, ALD
CF5011ANB, ANC, AND
CF5011ALA, ANA
CF5011ALB, ALC, ALD
CF5011ANB, ANC, AND
NIPPON PRECISION CIRCUITS INC.—3
CF5011 series
Switching Characteristics
V
DD
= 1.6 to 2.0V, V
SS
= 0V, Ta =
−20
to +80°C unless otherwise noted.
Rating
Parameter
Output rise time
Output fall time
Output duty cycle
1
Output disable delay time
2
Output enable delay time
2
Symbol
t
r
t
f
Duty
t
PLZ
t
PZL
Condition
min
Measurement cct 3, load cct 1, 0.2V
DD
to 0.8V
DD
, C
L
= 15pF
Measurement cct 3, load cct 1, 0.8V
DD
to 0.2V
DD
, C
L
= 15pF
Measurement cct 3, load cct 1, Ta = 25
°
C, V
DD
= 1.8V, C
L
= 15pF,
f
≤
70MHz
Measurement cct 3, load cct 1, Ta = 25°C, V
DD
= 1.6V, C
L
≤
15pF
–
–
40
–
–
typ
1
1
–
–
–
max
3.5
3.5
60
100
100
ns
ns
%
ns
ns
Unit
1. Monitored in sample lots.
2. In the case of the CF5011AL×, oscillator stop function is built-in. When INHN goes LOW, normal output stops. When INHN goes HIGH, normal output
is not resumed until after the oscillator start-up time has elapsed.
Current consumption and Output waveform with NPC’s standard crystal
f (MHz)
R (Ω)
18.62
20.53
22.17
15.37
25.42
L (mH)
16.24
11.34
7.40
3.83
4.18
Ca (fF)
1.733
1.396
1.370
1.836
1.254
Cb (pF)
5.337
3.989
4.105
5.191
5.170
Cb
30
40
50
60
70
L
Ca
R
FUNCTIONAL DESCRIPTION
Standby Function
Output three-state function (CF5011AL×, CF5011AN×)
When INHN goes LOW, the oscillator output on Q goes high impedance.
Oscillator stop function (CF5011AL×)
When INHN goes LOW, the oscillator stops.
Version
CF5011AL×
LOW
HIGH (or open)
CF5011AN×
LOW
INHN
HIGH (or open)
Q
f
O
output frequency
High impedance
f
O
output frequency
High impedance
Oscillator
Normal operation
Stop
Normal operation
Normal operation
NIPPON PRECISION CIRCUITS INC.—4
CF5011 series
MEASUREMENT CIRCUITS
Measurement cct 1
Measurement cct 4
Signal
Generator
R1
C1
XT
VDD
Q
XTN
INHN
VSS
XT
X'tal
R2
VDD
Q
R
UP1
=
V
DD
I
PR
(V
PR
= V
SS
)
XTN
INHN
VSS
Q output
V
OH
0V
V
V
PR
I
PR
R
UP2
= V
DD
V
PR
I
PR
(V
PR
= 0.7V
DD
)
1.0V
P−P
, 10MHz sine wave input signal
C1 : 0.001µF
R1 : 50Ω
R2 : 137.5Ω
A
Measurement cct 2
Measurement cct 5
I
OL
, I
Z
VDD
XT
Q
XTN
INHN
VSS
I
Z
VDD
XT
R
f2
=
V
DD
I
Rf
A
V
V
OL
A
I
Rf
XTN
INHN
VSS
Measurement cct 3
Load cct 1
A
XT
X'tal
XTN
INHN
VDD
I
DD
Q output
C
L
Q
VSS
C
L
= 15pF
(Including probe capacitance)
NIPPON PRECISION CIRCUITS INC.—5
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