CFY25
HiRel
X-Band GaAs Low Noise / General Purpose MESFET
•
•
•
•
•
•
HiRel
Discrete and Microwave
Semiconductor
For professional pre- and driver-amplifiers
For frequencies from 500 MHz to 20 GHz
Hermetically sealed microwave package
Low noise figure, high gain, moderate power
Space Qualification Expected 1998
ESA/SCC Detail Spec. No.: 5613/008,
Type Variant No.s 01 to 05
4
3
1
2
ESD: Electrostatic discharge
sensitive device, observe handling precautions!
Type
Marking
Ordering Code Pin Configuration
1
2
S
3
D
4
S
Package
CFY25-P (ql)
CFY25-23 (ql)
CFY25-23P (ql)
CFY25-20 (ql)
CFY25-20P (ql)
-
see below
G
Micro-X
CFY25-nnl: specifies noise, gain and output power level (see electrical characteristics)
(ql) Quality Level:
P: Professional Quality,
H: High Rel Quality,
S: Space Quality,
ES: ESA Space Quality,
Ordering Code:
Ordering Code:
Ordering Code:
Ordering Code:
Q62703F120
on request
on request
Q62703F119
(see order instructions for ordering example)
Semiconductor Group
1 of 8
Draft D, Sep. 0000
CFY25
Maximum Ratings
Parameter
Drain-source voltage
Drain-gate voltage
Gate-source voltage (reverse / forward)
Drain current
Gate forward current
RF Input Power, C- and X-Band
1)
Junction temperature
Storage temperature range
Total power dissipation
2)
Soldering temperature
3)
Thermal Resistance
Junction-soldering point
Symbol
V
DS
V
DG
V
GS
I
D
I
G
P
RF,in
T
J
T
stg
P
tot
T
sol
Values
5
7
- 5... + 0.5
80
1.5
+ 17
175
- 65... + 175
250
230
Unit
V
V
V
mA
mA
dBm
°C
°C
mW
°C
R
th JS
≤
410
K/W
Notes.:
1) For V
DS
≤
3 V. For V
DS
> 3 V, derating is required.
2) At T
S
= + 72.5 °C. For T
S
> + 72.5 °C derating is required.
3) During 15 sec. maximum. The same terminal shall not be resoldered until 3 minutes have
elapsed.
Semiconductor Group
2 of 8
Draft D, Sep. 0000
CFY25
Electrical Characteristics
(at T
A
=25°C; unless otherwise specified)
Parameter
Symbol
min.
Values
typ.
max.
Unit
DC Characteristics
Drain-source saturation current
V
DS
= 3 V, V
GS
= 0 V
Gate threshold voltage
V
DS
= 3 V, I
D
= 1 mA
Drain current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
Gate leakage current at pinch-off
V
DS
= 3 V, V
GS
= - 4 V
Transconductance
V
DS
= 3 V, I
D
= 15 mA
Gate leakage current at operation
V
DS
= 3 V, I
D
= 15 mA
Thermal resistance
junction to soldering point
I
Dss
-V
Gth
I
Dp
15
0.3
-
30
1.0
< 100
60
3.0
-
mA
V
µA
-I
Gp
-
< 100
200
µA
g
m15
35
40
-
mS
-I
G15
-
<1
2
µA
R
th JS
-
370
-
K/W
Semiconductor Group
3 of 8
Draft D, Sep. 0000
CFY25
Electrical Characteristics
(continued)
Parameter
Symbol
min.
Values
typ.
max.
Unit
AC Characteristics
Noise figure
1)
V
DS
= 3 V, I
D
= 15 mA, f = 12 GHz
CFY25-P
CFY25-20, -20P
CFY25-23, -23P
Associated gain.
1)
V
DS
= 3 V, I
D
= 15 mA, f = 12 GHz
CFY25-P
CFY25-20, -20P
CFY25-23, -23P
Output power at 1 dB gain compression
2)
P
1dB
V
DS
= 3 V, I
D(RF off)
= 20 mA, f = 12 GHz
CFY25-20, -23
CFY25-20P, 23P, -P
Linear power gain
2)
V
DS
= 3 V, I
D
= 20 mA, f = 12 GHz,
P
in
= 0 dBm
CFY25-20
CFY25-23
CFY25-20P, -P
CFY25-23P
Notes.:
1) Noise figure / sssociated gain characteristics given for minimum noise figure matching
conditions (fixed generic matching, no fine-tuning).
2) Output power / linear power gain characteristics given for optimum output power matching
conditions (fixed generic matching, no fine-tuning).
-
-
8.5
8.0
9.2
8.5
9.2
8.5
-
-
-
-
G
lp
-
14
15
15
-
-
dB
-
8.5
8.0
> 8.5
9
8.7
-
-
-
dBm
G
a
-
-
-
< 2.3
1.9
2.2
-
2.1
2.4
dB
NF
dB
Semiconductor Group
4 of 8
Draft D, Sep. 0000
CFY25
Typical Common Source S-Parameters CFY25-20
f
|S11| <S11
[GHz] [magn [angle
]
]
0,5
0,958
-22
1,0
0,931
-28
1,5
0,901
-36
2,0
0,875
-45
2,5
0,858
-56
3,0
0,838
-67
3,5
0,815
-78
4,0
0,794
-88
4,5
0,776
-98
5,0
0,760 -108
5,5
0,746 -117
6,0
0,732 -126
6,5
0,718 -135
7,0
0,703 -143
7,5
0,689 -150
8,0
0,674 -158
8,5
0,661 -166
9,0
0,650 -174
9,5
0,640
178
10,0 0,629
170
10,5 0,620
162
11,0 0,613
153
11,5 0,607
145
12,0 0,600
137
12,5 0,593
130
13,0 0,587
122
13,5 0,580
114
14,0 0,575
106
14,5 0,572
98
15,0 0,568
90
15,5 0,565
82
16,0 0,565
73
16,5 0,564
65
17,0 0,564
57
17,5 0,564
51
18,0 0,567
47
V
D S
= 3 V, I
D
= 15 mA, Z
o
= 50 ?
|S21| <S21 |S12| <S12 |S22| <S22 k-Fact.
[magn [angle [magn [angle [magn [angle [magn]
]
]
]
]
]
]
3,301
160 0,0170
71
0,683
-14
0,44
3,208
155 0,0287
64
0,673
-18
0,50
3,107
148 0,0398
59
0,660
-23
0,54
3,016
139 0,0502
53
0,648
-29
0,56
2,950
130 0,0602
47
0,635
-35
0,55
2,877
120 0,0691
42
0,621
-41
0,56
2,795
111 0,0767
36
0,603
-48
0,58
2,708
102 0,0834
31
0,590
-54
0,61
2,621
93
0,0893
25
0,573
-60
0,64
2,537
84
0,0939
20
0,562
-67
0,66
2,451
76
0,0975
15
0,549
-73
0,69
2,365
68
0,1000
10
0,539
-80
0,72
2,281
60
0,1017
5
0,529
-86
0,77
2,202
52
0,1035
1
0,521
-91
0,81
2,133
45
0,1049
-3
0,511
-96
0,87
2,072
38
0,1056
-6
0,504 -101
0,92
2,020
30
0,1063 -10
0,495 -106
0,97
1,976
23
0,1068 -13
0,484 -111
1,02
1,933
16
0,1076 -16
0,474 -116
1,06
1,896
9
0,1080 -20
0,463 -121
1,11
1,859
2
0,1084 -23
0,452 -127
1,16
1,826
-5
0,1090 -26
0,443 -133
1,19
1,797
-13 0,1097 -29
0,436 -140
1,22
1,767
-20 0,1105 -33
0,431 -147
1,24
1,738
-27 0,1114 -36
0,426 -153
1,27
1,708
-34 0,1125 -40
0,421 -159
1,30
1,678
-41 0,1138 -43
0,419 -166
1,32
1,651
-49 0,1149 -47
0,417 -172
1,34
1,627
-56 0,1161 -51
0,413 -178
1,36
1,607
-63 0,1180 -55
0,410
176
1,37
1,589
-70 0,1198 -59
0,408
170
1,37
1,570
-78 0,1219 -64
0,404
164
1,37
1,552
-86 0,1242 -69
0,402
157
1,36
1,548
-92 0,1266 -74
0,398
152
1,35
1,554
-98 0,1292 -78
0,396
147
1,32
1,562 -102 0,1319 -81
0,394
143
1,28
S
21
/ S
12
MAG
[dB]
[dB]
22,9
20,5
18,9
17,8
16,9
16,2
15,6
15,1
14,7
14,3
14,0
13,7
13,5
13,3
13,1
12,9
12,8
12,7
12,5
12,4
12,3
12,2
12,1
12,0
11,9
11,8
11,7
11,6
11,5
11,3
11,2
11,1
11,0
10,9
10,8
10,7
11,7
11,0
10,4
9,9
9,6
9,3
9,1
8,8
8,5
8,3
8,1
7,9
7,7
7,6
7,5
7,4
7,4
7,4
7,6
Semiconductor Group
5 of 8
Draft D, Sep. 0000
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