Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
| Parameter Name | Attribute value |
| Is it Rohs certified? | incompatible |
| Maker | Diodes Incorporated |
| package instruction | CYLINDRICAL, O-PBCY-W3 |
| Reach Compliance Code | unknown |
| Collector-emitter maximum voltage | 60 V |
| Configuration | SINGLE |
| Minimum DC current gain (hFE) | 50 |
| JEDEC-95 code | TO-92 |
| JESD-30 code | O-PBCY-W3 |
| JESD-609 code | e0 |
| Number of components | 1 |
| Number of terminals | 3 |
| Maximum operating temperature | 150 °C |
| Package body material | PLASTIC/EPOXY |
| Package shape | ROUND |
| Package form | CYLINDRICAL |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | PNP |
| Maximum power dissipation(Abs) | 0.625 W |
| Certification status | Not Qualified |
| surface mount | NO |
| Terminal surface | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| Transistor component materials | SILICON |
| Nominal transition frequency (fT) | 100 MHz |
| VCEsat-Max | 0.25 V |
| Base Number Matches | 1 |
| ITTA55 | 2N5088 | ITTA05 | ITTA06 | ITTA56 | |
|---|---|---|---|---|---|
| Description | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 | Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92 | Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 |
| Is it Rohs certified? | incompatible | incompatible | incompatible | incompatible | incompatible |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown |
| Collector-emitter maximum voltage | 60 V | 30 V | 60 V | 80 V | 80 V |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Minimum DC current gain (hFE) | 50 | 350 | 50 | 50 | 50 |
| JEDEC-95 code | TO-92 | TO-92 | TO-92 | TO-92 | TO-92 |
| JESD-30 code | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 | O-PBCY-W3 |
| JESD-609 code | e0 | e0 | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 3 | 3 | 3 |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL | CYLINDRICAL |
| Polarity/channel type | PNP | NPN | NPN | NPN | PNP |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| surface mount | NO | NO | NO | NO | NO |
| Terminal surface | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) | Tin/Lead (Sn/Pb) |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | BOTTOM | BOTTOM | BOTTOM | BOTTOM | BOTTOM |
| Transistor component materials | SILICON | SILICON | SILICON | SILICON | SILICON |
| Nominal transition frequency (fT) | 100 MHz | 50 MHz | 100 MHz | 100 MHz | 100 MHz |
| VCEsat-Max | 0.25 V | 0.5 V | 0.25 V | 0.25 V | 0.25 V |
| Base Number Matches | 1 | 1 | 1 | 1 | 1 |
| package instruction | CYLINDRICAL, O-PBCY-W3 | CYLINDRICAL, O-PBCY-W3 | - | - | CYLINDRICAL, O-PBCY-W3 |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | - | NOT SPECIFIED | 235 | 235 |
| Maximum power dissipation(Abs) | 0.625 W | 0.35 W | - | - | 0.625 W |
| Maximum time at peak reflow temperature | NOT SPECIFIED | - | NOT SPECIFIED | 10 | 10 |
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