ITTA06 datasheet, PDF - EEWORLD Datasheet

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ITTA06: DescriptionSmall Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92; CategoryDiscrete semiconductor The transistor; File Size64KB，1 Pages; ManufacturerDiodes Incorporated

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ITTA06 Overview

Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92

ITTA06 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	unknown
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	50
JEDEC-95 code	TO-92
JESD-30 code	O-PBCY-W3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	ROUND
Package form	CYLINDRICAL
Peak Reflow Temperature (Celsius)	235
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	WIRE
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz
VCEsat-Max	0.25 V
Base Number Matches	1

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ITTA06 Related Products

	ITTA06	ITTA55	2N5088	ITTA05	ITTA56
Description	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-92	Small Signal Bipolar Transistor, 0.05A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-92	Small Signal Bipolar Transistor, 80V V(BR)CEO, 1-Element, PNP, Silicon, TO-92
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible	incompatible
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown
Collector-emitter maximum voltage	80 V	60 V	30 V	60 V	80 V
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Minimum DC current gain (hFE)	50	50	350	50	50
JEDEC-95 code	TO-92	TO-92	TO-92	TO-92	TO-92
JESD-30 code	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3	O-PBCY-W3
JESD-609 code	e0	e0	e0	e0	e0
Number of components	1	1	1	1	1
Number of terminals	3	3	3	3	3
Maximum operating temperature	150 °C	150 °C	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL	CYLINDRICAL
Polarity/channel type	NPN	PNP	NPN	NPN	PNP
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
surface mount	NO	NO	NO	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Transistor component materials	SILICON	SILICON	SILICON	SILICON	SILICON
Nominal transition frequency (fT)	100 MHz	100 MHz	50 MHz	100 MHz	100 MHz
VCEsat-Max	0.25 V	0.25 V	0.5 V	0.25 V	0.25 V
Base Number Matches	1	1	1	1	1
Peak Reflow Temperature (Celsius)	235	NOT SPECIFIED	-	NOT SPECIFIED	235
Maximum time at peak reflow temperature	10	NOT SPECIFIED	-	NOT SPECIFIED	10
package instruction	-	CYLINDRICAL, O-PBCY-W3	CYLINDRICAL, O-PBCY-W3	-	CYLINDRICAL, O-PBCY-W3
Maximum power dissipation(Abs)	-	0.625 W	0.35 W	-	0.625 W

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