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Datasheet> All Categories > semiconductor> Discrete semiconductor> CDZCT2RA6.8B
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CDZCT2RA6.8B

Description
diode zener 6.8V 100mw vmn2
Categorysemiconductor    Discrete semiconductor   
File Size349KB，3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance  
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CDZCT2RA6.8B Overview

diode zener 6.8V 100mw vmn2

CDZCT2RA6.8B Parametric

Parameter NameAttribute value
Datasheets
CDZC6.8B
Product Photos
VMN2_VMN2 Pkg
Standard Package8,000
CategoryDiscrete Semiconductor Products
FamilyDiodes - Zener - Single
PackagingTape & Reel (TR)
Voltage - Zener (Nom) (Vz)6.8V
Tolerance±2%
Power - Max100mW
Impedance (Max) (Zzt)-
Current - Reverse Leakage @ V500nA @ 3.5V
Voltage - Forward (Vf) (Max) @ If-
Operating Temperature-
Mounting TypeSurface Mou
Package / Case2-SMD, Flat Lead
Supplier Device PackageVMN2
Dynamic CatalogCDZ Zener Diode
Other NamesCDZCT2RA6.8BTRCDZCT2RA68B

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Data Sheet
ESD Protection Diode
CDZC6.8B
Applications
ESD Protection
Dimensions（Unit
: mm
）
0.16±0.05
0.6±0.05
Land
size figure(Unit
: mm)
0.55
0.45
Features
1)Ultra small mold type.
（VMN2）
2)High reliability
3)Ultra low Capacitance
0.156
0.9±0.05
1.0±0.05
VMN2
Structure
0.37±0.03
Construction
Silicon epitaxial planar
0.35±0.1
ROHM : VMN2
dot (year week factory) + day
Taping
specifications（Unit
: mm
）
Absolute
maximum ratings
（Ta=25℃）
Parameter
Symbol
Power dissipation
P
Junction temperature
T
j
Storage temperature
Tstg
Limits
100
150
-55 to +150
Unit
mW
℃
℃
Electical
voltage（Ta=25℃）
Parameter
Zener voltage
Reverse current
Capacitance between terminals
Symbol
V
Z
I
R
Ct
Min.
6.65
-
-
Typ.
-
-
3
Max.
6.93
0.50
-
Unit
V
μA
pF
0.45
Conditions
I
Z
=5mA
V
R
=3.5V
V
R
=0V , f=1MHz
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
1/2
2011.03 - Rev.A
0.5

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