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2SD2134

Description
Silicon PNP epitaxial planar type
CategoryDiscrete semiconductor    The transistor   
File Size69KB,3 Pages
ManufacturerPanasonic
Websitehttp://www.panasonic.co.jp/semicon/e-index.html
Environmental Compliance
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2SD2134 Overview

Silicon PNP epitaxial planar type

2SD2134 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Maximum collector current (IC)1 A
Collector-emitter maximum voltage150 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PSIP-T3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)1.5 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN SILVER BISMUTH COPPER
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
Power Transistors
2SB1414
Silicon PNP epitaxial planar type
For low-frequency driver/high power amplification
Complementary to 2SD2134
3.8
±0.2
7.5
±0.2
Unit: mm
4.5
±0.2
Features
Excellent current I
C
characteristics of forward current transfer ratio
h
FE
vs. collector
High transition frequency f
T
Allowing automatic insertion with radial taping
10.8
±0.2
0.65
±0.1
2.5
±0.1
0.85
±0.1
1.0
±0.1
0.8 C
90˚
0.8 C
16.0
±1.0
0.7
±0.1
0.7
±0.1
1.15
±0.2
1.15
±0.2
Absolute Maximum Ratings
T
a
=
25°C
Parameter
Collector-base voltage (Emitter open)
Collector-emitter voltage (Base open)
Emitter-base voltage (Collector open)
Collector current
Peak collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
T
j
T
stg
Rating
−150
−150
−5
−1
−1.5
1.5
150
−55
to
+150
Unit
V
V
V
A
A
W
°C
°C
2.5
±0.2
0.8 C
1
2
3
0.5
±0.1
2.05
±0.2
0.4
±0.1
2.5
±0.2
1: Emitter
2: Collector
3: Base
MT-3-A1 Package
Electrical Characteristics
T
a
=
25°C
±
3°C
Parameter
Collector-emitter voltage (Base open)
Emiter-base voltage (Collector open)
Forward current transfer ratio
*1
Symbol
V
CEO
V
EBO
h
FE1
*1
*2
Conditions
I
C
= −100 µA,
I
B
=
0
I
E
= −10 µA,
I
C
=
0
V
CE
= −10
V, I
C
= −150
mA
V
CE
= −5
V, I
C
= −500
mA
I
C
= −500
mA, I
B
= −50
mA
I
C
= −500
mA, I
B
= −50
mA
V
CB
= −10
V, I
E
=
50 mA, f
=
200 MHz
V
CB
= −10
V, I
E
=
0, f
=
1 MHz
Min
−150
−5
90
50
Typ
Max
Unit
V
V
V
V
MHz
pF
330
0.5
−1.0
200
30
−2.0
−2.0
h
FE2
Collector-emitter saturation voltage
Base-emitter saturation voltage
*1
Transition frequency
Collector output capacitance
(Common base, input open circuited)
2. *1: Pulse measurement
*2: Rank classification
Rank
h
FE1
Q
90 to 155
R
V
CE(sat)
V
BE(sat)
f
T
C
ob
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
S
185 to 330
130 to 220
Publication date: February 2002
SJD00070BED
1

2SD2134 Related Products

2SD2134 2SB1414
Description Silicon PNP epitaxial planar type Silicon PNP epitaxial planar type
package instruction IN-LINE, R-PSIP-T3 IN-LINE, R-PSIP-T3
Contacts 3 3
Reach Compliance Code unknow unknow
ECCN code EAR99 EAR99
Maximum collector current (IC) 1 A 1 A
Collector-emitter maximum voltage 150 V 150 V
Configuration SINGLE SINGLE
Minimum DC current gain (hFE) 50 50
JESD-30 code R-PSIP-T3 R-PSIP-T3
Number of components 1 1
Number of terminals 3 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form IN-LINE IN-LINE
Polarity/channel type NPN PNP
Maximum power dissipation(Abs) 1.5 W 1.5 W
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
transistor applications AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
Base Number Matches 1 1
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