IRF3415STRRPBF datasheet, PDF - EEWORLD Datasheet

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IRF3415STRRPBF: Descriptionmosfet N-CH 150v 43a d2pak; CategoryDiscrete semiconductor The transistor; File Size1MB，11 Pages; ManufacturerInternational Rectifier （ Infineon ）; Websitehttp://www.irf.com/; Environmental Compliance

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IRF3415STRRPBF Overview

mosfet N-CH 150v 43a d2pak

IRF3415STRRPBF Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	International Rectifier （ Infineon ）
package instruction	LEAD FREE, PLASTIC, D2PAK-3
Contacts	3
Reach Compliance Code	not_compliant
ECCN code	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY
Avalanche Energy Efficiency Rating (Eas)	590 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V
Maximum drain current (ID)	43 A
Maximum drain-source on-resistance	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	150 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	30
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

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PD - 95112

IRF3415S/LPbF

•

Lead-Free

www.irf.com

3/16/04

IRF3415STRRPBF Related Products

	IRF3415STRRPBF	IRF3415S	IRF3415STRLHR	IRF3415SHR
Description	mosfet N-CH 150v 43a d2pak	Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A)	Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, D2PAK-3/2	Power Field-Effect Transistor, 43A I(D), 150V, 0.042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, PLASTIC, D2PAK-3/2
Maker	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）	International Rectifier （ Infineon ）
package instruction	LEAD FREE, PLASTIC, D2PAK-3	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2	SMALL OUTLINE, R-PSSO-G2
Contacts	3	3	3	3
Reach Compliance Code	not_compliant	compli	unknown	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99
Other features	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY	AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE	AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE
Avalanche Energy Efficiency Rating (Eas)	590 mJ	590 mJ	590 mJ	590 mJ
Shell connection	DRAIN	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	150 V	150 V	150 V	150 V
Maximum drain current (ID)	43 A	43 A	43 A	43 A
Maximum drain-source on-resistance	0.042 Ω	0.042 Ω	0.042 Ω	0.042 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2	R-PSSO-G2
Number of components	1	1	1	1
Number of terminals	2	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE	SMALL OUTLINE
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	150 A	150 A	150 A	150 A
surface mount	YES	YES	YES	YES
Terminal form	GULL WING	GULL WING	GULL WING	GULL WING
Terminal location	SINGLE	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON	SILICON
Is it lead-free?	Lead free	Contains lead	-	Contains lead
Is it Rohs certified?	conform to	incompatible	-	incompatible
JESD-609 code	e3	e0	-	e0
Humidity sensitivity level	1	1	-	1
Peak Reflow Temperature (Celsius)	260	225	-	225
Terminal surface	Matte Tin (Sn) - with Nickel (Ni) barrier	Tin/Lead (Sn/Pb)	-	TIN LEAD
Maximum time at peak reflow temperature	30	30	-	30

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