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RJK60S8DPK-M0#T0

Description
mosfet N-CH 600v 55a to3psg
Categorysemiconductor    Discrete semiconductor   
File Size195KB,8 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Environmental Compliance  
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RJK60S8DPK-M0#T0 Overview

mosfet N-CH 600v 55a to3psg

RJK60S8DPK-M0#T0 Parametric

Parameter NameAttribute value
Datasheets
RJK60S8DPK-M0
Product Photos
TO-3PSG
Featured Produc
SuperJunction (SJ) MOSFETs
PCN Obsolescence/ EOL
Multiple Devices 16/Aug/2013
Multiple Devices 01/Jul/2013
Standard Package100
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureSuper Juncti
Drain to Source Voltage (Vdss)600V
Current - Continuous Drain (Id) @ 25°C55A (Ta)
Rds On (Max) @ Id, Vgs56 mOhm @ 27.5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs82nC @ 10V
Input Capacitance (Ciss) @ Vds5300pF @ 25V
Power - Max416.6W
Mounting TypeThrough Hole
Package / CaseTO-3PSG
Supplier Device PackageTO-3PSG
Other NamesRJK60S8DPKM0T0
Preliminary
Datasheet
RJK60S8DPK-M0
600V - 55A - SJ MOS FET
High Speed Power Switching
Features
Superjunction MOSFET
Low on-resistance
R
DS(on)
= 0.045
typ. (at I
D
= 27.5 A, V
GS
= 10 V, Ta = 25C)
High speed switching
t
f
= 54 ns typ. (at I
D
= 27.5 A, V
GS
= 10 V, R
L
= 10.9
,
Rg = 10
,
Ta = 25C)
R07DS0644EJ0200
Rev.2.00
Aug 23, 2012
Outline
RENESAS Package code: PRSS0004ZH-A
(Package name:TO-3PSG)
D
4
G
1. Gate
2. Drain
3. Source
4. Drain
S
1
2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Ta = 25C
Ta = 100C
Drain peak current
Body-drain diode reverse drain current
Body-drain diode reverse drain peak current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal impedance
Channel temperature
Storage temperature
Notes: 1. Limited by Tch max.
2. STch = 25C, Tch
150C
3. Value at Tc = 25C
Symbol
V
DSS
V
GSS
I
D Note1
I
D Note1
I
D (pulse)Note1
I
DR Note1
I
DR (pulse) Note1
I
AP Note2
E
AR Note2
Pch
ch-c
Tch
Tstg
Note3
Ratings
600
+30,
20
55
34.8
110
55
110
9.2
4.61
416.6
0.3
150
–55 to +150
Unit
V
V
A
A
A
A
A
A
mJ
W
C/W
C
C
R07DS0644EJ0200 Rev.2.00
Aug 23, 2012
Page 1 of 7
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