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BSS308PE H6327

Description
mosfet P-CH 30v 2.0A sot23
Categorysemiconductor    Discrete semiconductor   
File Size240KB,9 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BSS308PE H6327 Overview

mosfet P-CH 30v 2.0A sot23

BSS308PE H6327 Parametric

Parameter NameAttribute value
Datasheets
BSS308PE
Product Photos
SOT-23-3
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTape & Reel (TR)
FET TypeMOSFET P-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C2A (Ta)
Rds On (Max) @ Id, Vgs80 mOhm @ 2A, 10V
Vgs(th) (Max) @ Id1V @ 11µA
Gate Charge (Qg) @ Vgs5nC @ 10V
Input Capacitance (Ciss) @ Vds500pF @ 15V
Power - Max500mW
Mounting TypeSurface Mou
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackagePG-SOT23-3
Dynamic CatalogP-Channel Logic Level Gate FETs
Other NamesBSS308PE H6327-NDBSS308PEH6327BSS308PEH6327XTSA1SP000928942
BSS308PE
OptiMOS™ P3 Small-Signal-Transistor
Features
• P-channel
• Enhancement mode
• Logic level (4.5V rated)
• ESD protected
• Qualified according to AEC Q101
• 100% lead-free; RoHS compliant
• Halogen-free according to IEC61249-2-21
Product Summary
V
DS
R
DS(on),max
V
GS
=-10 V
V
GS
=-4.5 V
I
D
­30
80
130
-2.0
PG-SOT-23
3
V
A
1
2
Type
BSS308PE
Package
PG-SOT23
Tape and Reel Information
H6327: 3000 pcs/ reel
Marking
YFs
Lead Free
Yes
Packing
Non dry
Maximum ratings,
at
T
j
=25 °C, unless otherwise specified
Parameter
Continuous drain current
Symbol Conditions
I
D
T
A
=25 °C
T
A
=70 °C
Pulsed drain current
Avalanche energy, single pulse
I
D,pulse
E
AS
T
A
=25 °C
I
D
=-2 A,
R
GS
=25
Ω
I
D
=-2 A,
V
DS
=-16V,
di /dt =-200A/µs,
T
j,max
=150 °C
Value
-2.0
-1.6
-8.0
-10.7
mJ
Unit
A
Reverse diode dv /dt
dv /dt
6
kV/µs
Gate source voltage
Power dissipation
1)
Operating and storage temperature
ESD Class
Soldering Temperature
IEC climatic category; DIN IEC 68-1
V
GS
P
tot
T
j
,
T
stg
JESD22-A114 -HBM
T
A
=25 °C
±20
0.5
-55 ... 150
2 (2kV to 4kV)
260 °C
55/150/56
V
W
°C
°C
°C
Rev 2.03
page 1
2011-07-08

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BSS308PE H6327 BSS308PE BSS308PEH6327 SP000928942
Description mosfet P-CH 30v 2.0A sot23 OptiMOS鈩?P3 Small-Signal-Transistor Drain-source voltage (Vdss): 30V Continuous drain current (Id) (at 25°C): 2A Gate-source threshold voltage: 2V @ 11uA Drain-source on-resistance: 80mΩ @ 2A, 10V Maximum power dissipation (Ta= 25°C): 500mW Type: P channel P channel, 30V, 2A, 80mΩ@10V Small Signal Field-Effect Transistor,
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