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FGA70N30TTU

Description
igbt 300v 201w to3p
CategoryDiscrete semiconductor    The transistor   
File Size552KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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FGA70N30TTU Overview

igbt 300v 201w to3p

FGA70N30TTU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-3PN
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresLOW CONDUCTION LOSS
Collector-emitter maximum voltage300 V
ConfigurationSINGLE
Maximum landing time (tf)300 ns
Gate emitter threshold voltage maximum5.5 V
Gate-emitter maximum voltage30 V
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)201 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)420 ns
Nominal on time (ton)120 ns
FGA70N30T 300V, 70A PDP Trench IGBT
December 2007
FGA70N30T
300V, 70A PDP IGBT
Features
• High current capability
• Low saturation voltage: V
CE(sat)
=1.5V @ I
C
= 40A
• High input impedance
• Fast switching
• RoHS complaint
tm
General Description
Using Novel Trench IGBT Technology, Fairchild’s new sesries
of trench IGBTs offer the optimum performance for PDP applica-
tions where low conduction and switching losses are essential.
Application
. PDP System
C
G
TO-3P
G C E
E
Absolute Maximum Ratings
Symbol
V
CES
V
GES
I
C pulse(1)*
P
D
T
J
T
stg
T
L
Gate-Emitter Voltage
Pulsed Collector Current
Maximum Power Dissipation
Maximum Power Dissipation
Operating Junction Temperature
Storage Temperature Range
Maximum Lead Temp. for soldering
Purposes, 1/8” from case for 5 seconds
@ T
C
= 25
o
C
@ T
C
= 25
o
C
@ T
C
= 100
o
C
Description
Collector-Emitter Voltage
Ratings
300
±30
160
201
90.6
-55 to +150
-55 to +150
300
Units
V
V
A
W
W
o
C
o
C
o
C
Thermal Characteristics
Symbol
R
θJC
(IGBT)
R
θJA
Notes:
(1)Repetitive test , pluse width = 100usec , Duty = 0.2
* Ic_pluse limited by max Tj
Parameter
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
Typ.
--
--
Max.
0.62
40
Units
o
C/W
o
C/W
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FGA70N30T Rev. A

FGA70N30TTU Related Products

FGA70N30TTU
Description igbt 300v 201w to3p
Is it Rohs certified? conform to
Maker Fairchild
Parts packaging code TO-3PN
package instruction FLANGE MOUNT, R-PSFM-T3
Contacts 2
Reach Compliance Code unknow
ECCN code EAR99
Other features LOW CONDUCTION LOSS
Collector-emitter maximum voltage 300 V
Configuration SINGLE
Maximum landing time (tf) 300 ns
Gate emitter threshold voltage maximum 5.5 V
Gate-emitter maximum voltage 30 V
JESD-30 code R-PSFM-T3
Number of components 1
Number of terminals 3
Maximum operating temperature 150 °C
Package body material PLASTIC/EPOXY
Package shape RECTANGULAR
Package form FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED
Polarity/channel type N-CHANNEL
Maximum power dissipation(Abs) 201 W
Certification status Not Qualified
surface mount NO
Terminal form THROUGH-HOLE
Terminal location SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED
transistor applications MOTOR CONTROL
Transistor component materials SILICON
Nominal off time (toff) 420 ns
Nominal on time (ton) 120 ns
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