DSSK 70-008AR
Power Schottky Rectifier
with common cathode
I
FAV
= 2x35 A
V
RRM
= 80 V
V
F
= 0.64 V
V
RSM
V
80
V
RRM
V
80
Type
A
C
A
ISOPLUS 247
TM
DSSK 70-008AR
A
C
A
Isolated
back surface *
C = Cathode, A = Anode
Symbol
I
FRMS
I
FAV
I
FAV
I
FSM
E
AS
I
AR
(dv/dt)
cr
T
VJ
T
VJM
T
stg
P
tot
F
C
V
ISOL
Weight
Conditions
T
C
= 150°C; rectangular, d = 0.5
T
C
= 150°C; rectangular, d = 0.5; per device
T
VJ
= 45°C; t
p
= 10 ms (50 Hz), sine
I
AS
= 35 A; L = 100 µH; T
VJ
= 25°C; non repetitive
V
A
=1.5 • V
RRM
typ.; f=10 kHz; repetitive
Maximum Ratings
70
35
70
600
61
3.5
tbd
-55...+175
175
-55...+150
A
A
A
A
mJ
A
V/µs
°C
°C
°C
W
N
V~
g
Features
• International standard package
• Very low V
F
• Extremely low switching losses
• Low I
RM
-values
• Isolated and
UL registered E153432
Applications
• Rectifiers in switch mode power
supplies (SMPS)
• Free wheeling diode in low voltage
converters
Advantages
• High reliability circuit operation
• Low voltage peaks for reduced
protection circuits
• Low noise switching
• Low losses
T
C
= 25°C
mounting force with clip
50/60 Hz, RMS; t = 1 s
typical
190
20...120
3000
6
Dimensions see Outlines.pdf
Symbol
I
R
V
F
Conditions
V
R
= V
RRM
;
V
R
= V
RRM
;
I
F
= 35 A;
I
F
= 35 A;
I
F
= 70 A;
T
VJ
= 25°C
T
VJ
= 125°C
T
VJ
= 125°C
T
VJ
= 25°C
T
VJ
= 125°C
0.25
Characteristic Values
typ.
max.
4
10
0.64
0.76
0.80
0.8
mA
mA
V
V
V
K/W
K/W
R
thJC
R
thCH
Pulse test:
Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
510
DSSK 70-008AR
A
100
I
F
I
R
100
mA
T =175°C
VJ
10
150°C
10000
pF
C
T
T
VJ
= 25°C
1
125°C
0.1
10
T
VJ
=
150°C
125°C
25°C
100°C
75°C
1000
0.01
50°C
0.001
25°C
0.0001
100
0
10 20 30 40 50 60 70
V
R
V
0
10 20 30 40 50 60 70 V
V
R
1
0.0
0.2
0.4
0.6
0.8 1.0 V 1.2
V
F
Fig. 1 Max. forward voltage
drop characteristics
80
A
60
I
F(AV)
40
d = 0.5
DC
60
W
50
P
(AV)
40
30
20
20
10
0
0
50
100
T
C
150 C 200
0
Fig. 2 Typ. reverse current I
R
versus reverse voltage
10000
Fig. 3 Typ. junction capacitance C
T
vs. reverse voltage V
R
A
I
FSM
d=
DC
0.5
0.33
0.25
0.17
0.08
1000
0
10
20
30
40 50
I
F(AV)
A
60
70
100
10
100
1000 µs 1000
t
P
Fig. 4 Avg. forward current I
F(AV)
vs. case temperature T
C
1
K/W
Fig. 5 Forward power loss characteristics
D = 0.5
0.33
0.25
Z
thJC
0.1
0.17
0.08
Single Pulse
0.01
0.0001
DSSS 35-008AR
Note: All curves are per diode
0.001
0.01
0.1
1
t
s 10
510
Fig. 6 Transient thermal impedance junction to case at various duty cycles
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
2-2
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