Fairchild’s advanced low voltage PowerTrench process.
Packaged in FLMP SSOT-6, the R
DS(ON)
and thermal
properties of the device are optimized for battery power
management applications.
Features
•
–5 A, –20 V. R
DS(ON)
= 44 mΩ @ V
GS
= –4.5 V
R
DS(ON)
= 64 mΩ @ V
GS
= –2.5 V
R
DS(ON)
= 95 mΩ @ V
GS
= –1.8 V
•
Low gate charge, High Power and Current handling
capability
•
High performance trench technology for extremely
low R
DS(ON)
•
FLMP SSOT-6 package: Enhanced thermal
performance in industry-standard package size
Bottom Drain Contact
Applications
•
Battery management/Charger Application
•
Load switch
4
5
6
Bottom Drain Contact
3
2
1
MOSFET Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
A
=25
o
C unless otherwise noted
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
Power Dissipation for Dual Operation
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1a)
Ratings
–20
±8
–5
–20
1.8
1.8
0.9
–55 to +150
Units
V
V
A
W
T
J
, T
stg
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
R
θJA
R
θJC
.036
2004
Fairchild Semiconductor Corporation
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
68
1
°C/W
Package Marking and Ordering Information
FDC6036P
7’’
8mm
3000 units
FDC6036P Rev C2 (W)
FDC6036P
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSS
T
A
= 25°C unless otherwise noted
Parameter
Test Conditions
I
D
= –250
µA
Min
–20
Typ
Max
Units
V
Off Characteristics
Drain–Source BreakdownVoltage V
GS
= 0 V,
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage
(Note 2)
I
D
= –250
µA,
Referenced to 25°C
V
DS
= –16 V,
V
GS
= ±8 V,
V
GS
= 0 V
V
DS
= 0 V
–24
–1
±100
mV/°C
µA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
V
DS
= V
GS
,
I
D
= –250
µA
–0.4
–0.7
4.4
37
52
74
51
16
–1.5
V
mV/°C
I
D
= –250
µA,
Referenced to 25°C
V
GS
= –4.5 V,
I
D
= –5.0 A
I
D
= –4.0 A
V
GS
= –2.5 V,
I
D
= –3.2 A
V
GS
= –1.8 V,
V
GS
= –4.5 V,I
D
= –5 A,T
J
=125°C
V
DS
= –5 V,
I
D
= –5 A
44
64
95
61
mΩ
gfs
Forward Transconductance
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Rg
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
(Note 2)
V
DS
= –10 V,
f = 1.0 MHz
V
GS
= 0 V,
992
169
85
pF
pF
pF
mΩ
V
GS
= 15 mV
f = 1.0 MHz
8.6
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= –10 V,
V
GS
= –4.5 V,
I
D
= –1 A,
R
GEN
= 6
Ω
12
10
40
20
24
20
64
36
14
ns
ns
ns
ns
nC
nC
nC
V
DS
= –10 V,
V
GS
= –4.5 V
I
D
= –5 A,
10
1.7
2.0
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
trr
Qrr
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
V
GS
= 0 V,
I
S
= –1.25 A
(Note 2)
–1.25
–0.7
19
7.8
–1.2
A
V
ns
nC
I
F
= –5 A,
d
iF
/d
t
= 100 A/µs
FDC6036P Rev C2 (W)
FDC6036P
Electrical Characteristics
NOTES:
T
A
= 25°C unless otherwise noted
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
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