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FW349-TL-E

Description
mosfet N/P-CH 45v 5/4.5A 8-sop
Categorysemiconductor    Discrete semiconductor   
File Size66KB,6 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Environmental Compliance  
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FW349-TL-E Overview

mosfet N/P-CH 45v 5/4.5A 8-sop

FW349-TL-E Parametric

Parameter NameAttribute value
Datasheets
FW349
Product Photos
8-SOIC
Catalog Drawings
SOP8 Package - N, N/P & Dual-N Channel T
Standard Package1,000
CategoryDiscrete Semiconductor Products
FamilyFETs - Arrays
PackagingTape & Reel (TR)
FET TypeN and P-Channel
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)45V
Current - Continuous Drain (Id) @ 25°C5A, 4.5A
Rds On (Max) @ Id, Vgs37 mOhm @ 5A, 10V
Vgs(th) (Max) @ Id-
Gate Charge (Qg) @ Vgs18.1nC @ 10V
Input Capacitance (Ciss) @ Vds860pF @ 20V
Power - Max1.8W
Mounting TypeSurface Mou
Package / Case8-SOIC (0.173", 4.40mm Width)
Supplier Device Package8-SOP
Other Names869-1168-2
Ordering number : EN8750
FW349
SANYO Semiconductors
DATA SHEET
N-Channel and P-Channel Silicon MOSFETs
FW349
Features
General-Purpose Switching Device
Applications
Motor drive application.
Low ON-resistance.
Ultrahigh-speed switching.
Composite type with an N-channel MOSFET and a P-channel MOSFET driving from a 4V supply voltage
contained in a single package.
High-density mounting.
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (PW≤10s)
Drain Current (PW≤10µs)
Allowable Power Dissipation
Total Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
ID
IDP
PD
PT
Tch
Tstg
duty cycle≤1%
duty cycle≤1%
Mounted on a ceramic board
(1500mm
2
✕0.8mm)1unit,
PW≤10s
Mounted on a ceramic board
(1500mm
2
✕0.8mm),
PW≤10s
Conditions
N-channel
45
±20
5
6
20
1.8
2.2
150
--55 to +150
P-channel
-
-45
±20
--4.5
--5
-
-18
Unit
V
V
A
A
A
W
W
°C
°C
Marking : W349
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment (home appliances, AV equipment,
communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be
intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace
instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety
equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case
of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee
thereof. If you should intend to use our products for applications outside the standard applications of our
customer who is considering such use and/or outside the scope of our intended standard applications, please
consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our
customer shall be solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are not
guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent
device, the customer should always evaluate and test devices mounted in the customer' s products or
equipment.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82907PA TI IM TC-00000835 No.8750-1/6

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FW349-TL-E
Description mosfet N/P-CH 45v 5/4.5A 8-sop
Standard Package 1,000
Category Discrete Semiconductor Products
Family FETs - Arrays
Packaging Tape & Reel (TR)
FET Type N and P-Channel
FET Feature Logic Level Gate
Drain to Source Voltage (Vdss) 45V
Current - Continuous Drain (Id) @ 25°C 5A, 4.5A
Rds On (Max) @ Id, Vgs 37 mOhm @ 5A, 10V
Gate Charge (Qg) @ Vgs 18.1nC @ 10V
Input Capacitance (Ciss) @ Vds 860pF @ 20V
Power - Max 1.8W
Mounting Type Surface Mou
Package / Case 8-SOIC (0.173", 4.40mm Width)
Supplier Device Package 8-SOP
Other Names 869-1168-2
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