FQU5N40
— N-Channel QFET
®
MOSFET
November
2013
FQU5N40
N-Channel QFET
®
MOSFET
400 V, 3.4 A, 1.6 Ω
Description
Features
•
3.4
A,
400
V, R
DS(on)
=
1.6
Ω
(Max.) @ V
GS
= 10 V,
I
D
=
1.7
A
• Low Gate Charge (Typ.
10
nC)
• Low C
rss
(Typ.
7
pF)
• 100% Avalanche Tested
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, active power
factor correction (PFC), and electronic lamp ballasts.
D
G
G
D
S
I-PAK
S
Absolute Maximum Ratings
)
4
4
)
;
4
;
!5
9
T
C
= 25°C unless otherwise noted.
0
+6781
0
+,((81
9
FQU5N40TU
&((
%&
6 ,7
,% -
±%(
)
'
'
'
)
=
'
=
)5
@
@
@58
8
8
9
0
+6781?
9
0
+6781
"!678
*
6<(
%&
&7
&7
67
&7
( %-
77A,7(
%((
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
Thermal Characteristics
Symbol
R
JC
R
JA
Parameter
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (Minimum
Pad
of 2-oz
Copper),
Max.
Thermal Resistance, Junction to Ambient (*1 in
2
Pad
of 2-oz
Copper),
Max.
FQU5N40TU
2.78
110
50
o
C/W
Unit
©2000 Fairchild Semiconductor Corporation
FQU5N40
Rev. C3
1
www.fairchildsemi.com
FQU5N40
— N-Channel QFET
®
MOSFET
Package Marking and Ordering Information
Part Number
FQU5N40TU
Top Mark
FQU5N40
Package
IPAK
Packing Method
Tube
Reel Size
N/A
Tape Width
N/A
Quantity
70
units
Electrical Characteristics
T
C
= 25°C unless otherwise noted.
.
.
Max
.
D)
∆D)
5∆
4
4
4
D >
)
E: )
: D/ >
: D/ >
*!
)
+()4
+67(µ'
4
)
+&(())
+()
)
+%6()
+,678
)
+%())
+()
)
+%())
+()
&((
( %C
,
,(
,((
,((
)
)58
µ'
µ'
'
'
)
*
: )
)
+)
4
+67(µ'
)
+,()4
+, 2'
)
+7()4
+, 2'
%(
, 62
6<
7(
,-
)
Ω
)
+67))
+()
+, ( F#
%7(
-(
2
&-(
C(
<
G
G
G
*
:
:
V
DS
= 320 V, I
D
= 4.5 A,
V
GS
= 10 V
)
+6(()4
+& 7'
*
+67Ω
,6
-(
6(
%(
,(
%(
&7
%(
,%(
7(
2(
,%
4
4
)
G
)
+()4
+% &'
)
+()4
+& 7'
4
5+,(('5µ
,<(
,(
%&
,% -
,7
'
'
)
µ
Notes:
1.Repetitive
rating: pulse-width
limited by maximum junction temperature.
2. L = 44 mH, I
AS
= 3.4 A, V
DD
≤ 50 V, R
G
= 25 Ohm,
starting
T
J
= 25
o
C.
3. I
SD
≤ 4.5A, di/dt ≤ 200 A/us, V
DD
≤ BVDSS,
starting
T
J
= 25
o
C.
4. Essentially independent of operating temperature.
©2000 Fairchild Semiconductor Corporation
FQU5N40
Rev. C3
2
www.fairchildsemi.com
FQU5N40
— N-Channel QFET
®
MOSFET
50KΩ
12V
200nF
300nF
Same Type
as DUT
V
DS
V
GS
10V
Q
gs
Q
g
V
GS
Q
gd
DUT
I
G
= const.
3mA
Charge
Figure
12.
Gate Charge Test Circuit & Waveform
V
DS
R
G
V
GS
10V
R
L
V
DD
V
DS
90%
V
GS
DUT
V
GS
10%
t
d(on)
t
on
t
r
t
d(off)
t
off
t
f
Figure
13.
Resistive Switching Test Circuit & Waveforms
L
V
DS
I
D
R
G
V
GS
10V
GS
t
p
BV
DSS
1
E
AS
= ---- L I
AS2
--------------------
2
BV
DSS
- V
DD
BV
DSS
I
AS
V
DD
I
D
(t)
V
DD
t
p
DUT
V
DS
(t)
Time
Figure
14.
Unclamped Inductive Switching Test Circuit & Waveforms
©2000 Fairchild Semiconductor Corporation
FQU5N40
Rev. C3
5
www.fairchildsemi.com
PCB Design
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