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IRFI620

Description
mosfet N-CH 200v 4.1A to220fp
Categorysemiconductor    Discrete semiconductor   
File Size2MB,8 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

IRFI620 Overview

mosfet N-CH 200v 4.1A to220fp

IRFI620 Parametric

Parameter NameAttribute value
Datasheets
IRFI620G
Product Photos
TO-220AB
Standard Package50
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTube
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureStandard
Drain to Source Voltage (Vdss)200V
Current - Continuous Drain (Id) @ 25°C4.1A (Tc)
Rds On (Max) @ Id, Vgs800 mOhm @ 2.5A, 10V
Vgs(th) (Max) @ Id4V @ 250µA
Gate Charge (Qg) @ Vgs14nC @ 10V
Input Capacitance (Ciss) @ Vds260pF @ 25V
Power - Max30W
Mounting TypeThrough Hole
Package / CaseTO-220-3 Full Pack, Isolated Tab
Supplier Device PackageTO-220-3
Other Names*IRFI620
IRFI620G, SiHFI620G
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
V
DS
(V)
R
DS(on)
(Ω)
Q
g
(Max.) (nC)
Q
gs
(nC)
Q
gd
(nC)
Configuration
V
GS
= 10 V
14
3.0
7.9
Single
D
FEATURES
200
0.80
• Isolated Package
• High Voltage Isolation = 2.5 kV
RMS
(t = 60 s;
f = 60 Hz)
• Sink to Lead Creepage Distance = 4.8 mm
• Dynamic dV/dt Rating
• Low Thermal Resistance
• Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
TO-220 FULLPAK
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional
insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation
capability and a low thermal resistance between the tab and
external heatsink. This isolation is equivalent to using a 100
micron mica barrier with standard TO-220 product. The
FULLPAK is mounted to a heatsink using a single clip or by
a single screw fixing.
G
G D S
S
N-Channel
MOSFET
ORDERING INFORMATION
Package
Lead (Pb)-free
SnPb
TO-220 FULLPAK
IRFI620GPbF
SiHFI620G-E3
IRFI620G
SiHFI620G
ABSOLUTE MAXIMUM RATINGS
T
C
= 25 °C, unless otherwise noted
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain
Linear Derating Factor
Single Pulse Avalanche Energy
b
Repetitive Avalanche Current
a
Repetitive Avalanche Energy
a
Maximum Power Dissipation
Peak Diode Recovery dV/dt
c
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
Mounting Torque
Current
a
V
GS
at 10 V
T
C
= 25 °C
T
C
= 100 °C
SYMBOL
V
DS
V
GS
I
D
I
DM
E
AS
I
AR
E
AR
P
D
dV/dt
T
J
, T
stg
LIMIT
200
± 20
4.1
2.6
16
0.24
100
4.1
3.0
30
5.0
- 55 to + 150
300
d
10
1.1
UNIT
V
A
W/°C
mJ
A
mJ
W
V/ns
°C
lbf · in
N·m
T
C
= 25 °C
for 10 s
6-32 or M3 screw
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 50 V, starting T
J
= 25 °C, L = 8.9 mH, R
G
= 25
Ω,
I
AS
= 4.1 A (see fig. 12).
c. I
SD
5.2 A, dI/dt
95 A/µs, V
DD
V
DS
, T
J
150 °C.
d. 1.6 mm from case.
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91146
S-81292-Rev. A, 16-Jun-08
www.vishay.com
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