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VIT3060C-M3/4W

Description
diode schottky 30a 60v TO-262aa
Categorysemiconductor    Discrete semiconductor   
File Size142KB,5 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Environmental Compliance  
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VIT3060C-M3/4W Overview

diode schottky 30a 60v TO-262aa

VIT3060C-M3/4W Parametric

Parameter NameAttribute value
Datasheets
V(I)T3060C
Standard Package50
CategoryDiscrete Semiconductor Products
FamilyDiodes, Rectifiers - Arrays
VT3060C, VIT3060C
www.vishay.com
Vishay General Semiconductor
Ultra Low V
F
= 0.38 V at I
F
= 5 A
Dual High Voltage Trench MOS Barrier Schottky Rectifier
TMBS
®
TO-220AB
K
TO-262AA
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Solder bath temperature 275 °C max. 10 s, per
JESD 22-B106
2
1
VT3060C
PIN 1
PIN
3
PIN 2
CASE
3
1
VIT3060C
PIN 1
PIN
3
2
3
• Material categorization: for definitions of compliance
please see
www.vishay.com/doc?99912
TYPICAL APPLICATIONS
PIN 2
K
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
V
F
at I
F
= 15 A
T
J
max.
Package
Diode variations
2 x 15 A
60 V
170 A
0.57 V
150 °C
TO-220AB, TO-262AA
Common cathode
Case:
TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Terminals:
matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
as marked
Mounting Torque:
10 in-lbs maximum
per
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum average forward rectified current
(fig. 1)
per device
per diode
SYMBOL
V
RRM
I
F(AV)
I
FSM
dV/dt
T
J
, T
STG
VT3060C
60
30
15
170
10 000
-55 to +150
VIT3060C
UNIT
V
A
A
V/μs
°C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Voltage rate of change (rated V
R
)
Operating junction and storage temperature range
Revision: 09-Nov-17
Document Number: 89235
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
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