PD-90551E
REPETITIVE AVALANCHE AND dv/dt RATED
HEXFET TRANSISTORS
THRU-HOLE - TO-205AF (TO-39)
Product Summary
Part Number BVDSS R
DS(on)
IRFF9230
-200V
0.80Ω
®
®
IRFF9230
JANTX2N6851
JANTXV2N6851
JANS2N6851
REF:MIL-PRF-19500/564
200V, P-CHANNEL
I
D
-4.0A
The HEXFET technology is the key to International
Rectifier’s advanced line of power MOSFET transistors.
The efficient geometry and unique processing of this
latest “State of the Art” design achieves: very low on-
state resistance combined with high transconductance.
The HEXFET transistors also feature all of the well
established advantages of MOSFETs such as voltage
control, very fast switching, ease of parelleling and
temperature stability of the electrical parameters.
They are well suited for applications such as switching
power supplies, motor controls, inverters, choppers,
audio amplifiers and high energy pulse circuits.
TO-39
Features:
n
n
n
n
n
n
Repetitive Avalanche Ratings
Dynamic dv/dt Rating
Hermetically Sealed
Simple Drive Requirements
Ease of Paralleling
ESD Rating: Class 1C per MIL-STD-750,
Method 1020
Absolute Maximum Ratings
Parameter
ID @ VGS = -10V, TC = 25°C
Continuous Drain Current
-4.0
-2.4
-16
25
0.20
±20
75
-4.0
2.5
-5.0
-55 to 150
300 (0.063 in.(1.6mm) from case for 10s)
0.98 (typical)
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
ID @ VGS = -10V, TC = 100°C Continuous Drain Current
IDM
Pulsed Drain Current
PD @ TC = 25°C
Max. Power Dissipation
Linear Derating Factor
VGS
Gate-to-Source Voltage
EAS
Single Pulse Avalanche Energy
IAR
EAR
dv/dt
TJ
T STG
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
Units
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1
07/28/15
IRFF9230
Electrical Characteristics
@ Tj = 25°C (Unless Otherwise Specified)
Parameter
BVDSS
∆BV
DSS/∆TJ
RDS(on)
VGS(th)
gfs
IDSS
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Min
-200
—
—
—
-2.0
2.2
—
—
—
—
14.7
0.8
5.0
—
—
—
—
—
Typ Max Units
—
-0.22
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
7.0
—
—
0.80
1.68
-4.0
—
-25
-250
-100
100
34.8
7.0
17
50
100
100
80
—
V
V/°C
Ω
V
S
µA
Test Conditions
VGS = 0V, ID = -1.0mA
Reference to 25°C, ID = -1.0mA
VGS = -10V, ID = -2.4A
VGS = -10V, ID = -4.0A
VDS = VGS, ID = -250µA
VDS = -15V, IDS = -2.4A
VDS = -160V, VGS = 0V
VDS = -160V
VGS = 0V, TJ = 125°C
VGS = -20V
VGS = 20V
VGS = -10V, ID = -4.0A
VDS= -100V
VDD = -100V, ID = -4.0A,
VGS = -10V,RG = 7.5Ω
IGSS
IGSS
Qg
Q gs
Q gd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
nA
nC
ns
nH
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
700
200
40
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
—
—
—
—
—
—
—
—
—
—
-4.0
-20
-6.0
400
4.0
Test Conditions
A
V
ns
µC
T
j
= 25°C, IS = -4.0A, VGS = 0V
Tj = 25°C, IF = -4.0A, di/dt
≤
-100A/µs
VDD
≤
-50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJA
Junction-to-Case
Junction-to-Ambient
Min Typ Max Units
—
—
—
—
5.0
175
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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IRFF9230
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs.Temperature
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3
IRFF9230
13 a& b b
13 a&
13 a& b
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
OPERATION IN THIS AREA LIMITED
BY R DS (on)
10
100µs
1ms
1
10ms
-I D, Drain-to-Source Current (A)
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10
100
DC
0.01
1000
-VDS , Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRFF9230
V
DS
V
GS
R
G
V
GS
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
R
D
D.U.T.
+
Fig 10a.
Switching Time Test Circuit
t
d(on)
t
r
t
d(off)
t
f
V
GS
10%
90%
Fig 9.
Maximum Drain Current Vs.
CaseTemperature
V
DS
Fig 10b.
Switching Time Waveforms
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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V
DD
5
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