V73CBG02168RCLJG6H datasheet, PDF

V73CBG02168RCLJG6H: DescriptionDDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96,; Categorystorage storage; File Size2MB，63 Pages; ManufacturerProMOS Technologies Inc; Environmental Compliance

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V73CBG02168RCLJG6H Overview

DDR DRAM, 128MX16, 0.4ns, CMOS, PBGA96,

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Objectid	8309168927
package instruction	FBGA, BGA96,9X16,32
Reach Compliance Code	compliant
Country Of Origin	Mainland China
ECCN code	EAR99
YTEOL	2
Maximum access time	0.4 ns
Maximum clock frequency (fCLK)	400 MHz
I/O type	COMMON
interleaved burst length	8
JESD-30 code	R-PBGA-B96
memory density	2147483648 bit
Memory IC Type	DDR3L DRAM
memory width	16
Number of terminals	96
word count	134217728 words
character code	128000000
Maximum operating temperature	105 °C
Minimum operating temperature	-40 °C
organize	128MX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	FBGA
Encapsulate equivalent code	BGA96,9X16,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, FINE PITCH
power supply	1.35 V
Certification status	Not Qualified
refresh cycle	8192
Continuous burst length	8
Maximum standby current	0.012 A
Maximum slew rate	0.19 mA
Nominal supply voltage (Vsup)	1.35 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM

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