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BU808DFH

Description
HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR
CategoryDiscrete semiconductor    The transistor   
File Size145KB,7 Pages
ManufacturerSTMicroelectronics
Websitehttp://www.st.com/
Environmental Compliance
Download Datasheet Parametric View All

BU808DFH Overview

HIGH VOLTAGE FAST-SWITCHING NPN POWER DARLINGTON TRANSISTOR

BU808DFH Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerSTMicroelectronics
Parts packaging codeTO-220FH
package instructionPLASTIC, TO-220FH, 3 PIN
Contacts3
Reach Compliance Code_compli
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)8 A
Collector-emitter maximum voltage700 V
ConfigurationDARLINGTON WITH BUILT-IN DIODE AND RESISTOR
Minimum DC current gain (hFE)60
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)245
Polarity/channel typeNPN
Maximum power dissipation(Abs)42 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
®
BU808DFH
HIGH VOLTAGE FAST-SWITCHING
NPN POWER DARLINGTON TRANSISTOR
s
s
s
s
s
s
s
s
NEW Fully Plastic TO-220 for HIGH
VOLTAGE APPLICATIONS
NPN MONOLITHIC DARLINGTON WITH
INTEGRATED FREE-WHEELING DIODE
HIGH VOLTAGE CAPABILITY ( > 1400 V )
HIGH DC CURRENT GAIN ( TYP. 150 )
LOW BASE-DRIVE REQUIREMENTS
DEDICATED APPLICATION NOTE AN1184
FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
CREEPAGE PATH > 4 mm
TO-220FH
(see page 6)
APPLICATIONS
s
COST EFFECTIVE SOLUTION FOR
HORIZONTAL DEFLECTION IN LOW END
TV UP TO 21 INCHES.
DESCRIPTION
The BU808DFH is a NPN transistor in monolithic
Darlington configuration. It is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
V
isol
T
stg
T
j
Parameter
Collector-Base Voltage (I
E
= 0)
Collector-Emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current (t
p
< 5 ms)
Base Current
Base Peak Current (t
p
< 5 ms)
Total Dissipation at T
c
= 25
o
C
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
Value
1400
700
5
8
10
3
6
42
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o
o
C
C
April 2002
1/7
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