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DTC363TKT146

Description
trans prebias npn 200mw smt3
CategoryDiscrete semiconductor    The transistor   
File Size59KB,3 Pages
ManufacturerROHM Semiconductor
Websitehttps://www.rohm.com/
Environmental Compliance
Download Datasheet Parametric View All

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DTC363TKT146 Overview

trans prebias npn 200mw smt3

DTC363TKT146 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerROHM Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresDIGITAL
Maximum collector current (IC)0.6 A
Collector-emitter maximum voltage15 V
ConfigurationSINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)100
JESD-30 codeR-PDSO-G3
JESD-609 codee1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Silver/Copper (Sn/Ag/Cu)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature10
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max0.08 V
Transistors
Digital transistors (built-in resistor)
DTC363TK / DTC363TS
FFeatures
In addition to the features of regular dig-
ital transistors,
1) Low V
CE(sat)
makes these transistors
optimal for muting circuits.
V
CE(sat)
= 40mV (Typ.)
(I
C
/ I
B
= 50mA / 2.5mA)
2) They can be used at high current (I
C
= 600mA).
FExternal
dimensions (Units: mm)
FStructure
NPN digital transistor
(Built-in resistor type)
FEquivalent
circuit
(96-352-C363T)
444
Those who are doing question F can join group 69079341
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