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T2480N26TOF VT

Description
The T2480N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 111mm and a height of 26mm.
Categorysemiconductor    Discrete semiconductor   
File Size265KB,10 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
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T2480N26TOF VT Overview

The T2480N Phase Control Thyristor discs are assembled in high reliable, robust and hermetic sealed ceramic housings with a dia of 111mm and a height of 26mm.

N
Netz-Thyristor
Phase Control Thyristor
Datenblatt / Data sheet
T2480N
Elektrische
T
Eigenschaften
= -40 °C... T
vj
vj max
Elektrische Eigenschaften / Electrical properties
Höchstzulässige Werte / Maximum rated values
enndaten
Periodische Vorwärts- und Rückwärts-Spitzensperrspannung T
vj
= -40 °C... T
vj max
repetitive peak forward off-state and reverse voltages
V
DRM
,V
RRM
2200
2400
V
DSM
V
RSM
I
TRMSM
2200
2400
2300
2500
2600 V
2800 V
2600 V
2800 V
2700 V
2900 V
5100 A
2490 A
3570 A
5610 A
47500 A
43500 A
11045 10³ A²s
9460 10³ A²s
200 A/µs
1000 V/µs
Vorwärts-Stossspitzensperrspannung
non-repetitive peak forward off-state voltage
Rückwärts-Stossspitzensperrspannung
non-repetitive peak reverse voltage
Durchlassstrom-Grenzeffektivwert
maximum RMS on-state current
Dauergrenzstrom
average on-state current
Dauergrenzstrom
average on-state current
Durchlaßstrom-Effektivwert
RMS on-state current
Stossstrom-Grenzwert
surge current
Grenzlastintegral
I²t-value
Kritische Stromsteilheit
critical rate of rise of on-state current
Kritische Spannungssteilheit
critical rate of rise of off-state voltage
T
vj
= +25 °C... T
vj max
T
C
= 85 °C
T
C
= 55 °C,
θ
= 180°sin, t
P
= 10 ms
I
TAVM
I
TAVM
I
TRMS
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
T
vj
= 25 °C, t
P
= 10 ms
T
vj
= T
vj max
, t
P
= 10 ms
DIN IEC 60747-6
f = 50 Hz, i
GM
= 1 A, di
G
/dt = 1 A/µs
T
vj
= T
vj max
, v
D
= 0,67 V
DRM
th
5.Kennbuchstabe / 5 letter F
I
TSM
I²t
(di
T
/dt)
cr
(dv
D
/dt)
cr
Charakteristische Werte / Characteristic values
Durchlassspannung
on-state voltage
Schleusenspannung
threshold voltage
Ersatzwiderstand
slope resistance
Durchlasskennlinie
600 A
i
T
12500 A
on-state characteristic
T
vj
= T
vj max
, i
T
= 6,5 kA
T
vj
= T
vj max
, i
T
= 3 kA
T
vj
= T
vj max
T
vj
= T
vj max
T
vj
= T
vj max
v
T
V
(TO)
r
T
A=
B=
C=
D=
I
GT
V
GT
I
GD
max.
max.
2 V
1,43 V
0,95 V
0,154 mΩ
8,249E-01
1,398E-04
8,036E-03
2,454E-03
max.
max.
max.
max.
max.
max.
max.
max.
max.
250 mA
2,5 V
10 mA
5 mA
0,25 V
300 mA
1500 mA
250 mA
4 µs
v
T
=
A
+
B
i
T
+
C
ln ( i
T
+
1)
+
D
Zündstrom
gate trigger current
Zündspannung
gate trigger voltage
Nicht zündender Steuerstrom
gate non-trigger current
Nicht zündende Steuerspannung
gate non-trigger voltage
Haltestrom
holding current
Einraststrom
latching current
Vorwärts- und Rückwärts-Sperrstrom
forward off-state and reverse current
Zündverzug
gate controlled delay time
i
T
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V
T
vj
= T
vj max
, v
D
= 12V
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= T
vj max
, v
D
= 0,5 V
DRM
T
vj
= 25 °C, v
D
= 12V
T
vj
= 25 °C, v
D
= 12V, R
GK
10
i
GM
= 1 A, di
G
/dt = 1 A/µs, t
g
= 20 µs
T
vj
= T
vj max
v
D
= V
DRM
, v
R
= V
RRM
V
GD
I
H
I
L
i
D
, i
R
DIN IEC 60747-6
t
gd
T
vj
= 25 °C, i
GM
= 1 A, di
G
/dt = 1 A/µs
prepared by: H.Sandmann
approved by: M.Leifeld
date of publication:
revision:
2010-07-19
3.1
IFBIP D AEC / 2010-07-19, H.Sandmann
A 23/10
Seite/page
1/10

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