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KSC2682YSTU

Description
transistor npn 180v 100ma TO-126
CategoryDiscrete semiconductor    The transistor   
File Size48KB,5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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KSC2682YSTU Overview

transistor npn 180v 100ma TO-126

KSC2682YSTU Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage180 V
ConfigurationSINGLE
Minimum DC current gain (hFE)160
JEDEC-95 codeTO-126
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Maximum power dissipation(Abs)8 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
Base Number Matches1
KSC2682
KSC2682
Audio Frequency Power Amplifier
• Complement to KSA1142
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
180
180
5
100
1.2
8
150
-55 ~ 150
Units
V
V
V
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
V
CB
= 180V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 10V, I
C
= 20mA
V
CB
= 10V, I
E
= 0
f = 1MHz
V
CE
= 10V, I
C
= 1mA
R
S
= 10KΩ, f = 1kHz
90
100
190
200
0.12
0.8
200
3.2
4
5.0
Min.
Typ.
Max.
1.0
1.0
320
0.5
1.5
V
V
MHz
pF
dB
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Classification
h
FE2
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000

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Description transistor npn 180v 100ma TO-126 transistor npn 180v 100ma TO-126 transistor npn 180v 100ma TO-126 transistor npn 180v 100ma TO-126
Is it Rohs certified? conform to conform to conform to conform to
Maker Fairchild Fairchild Fairchild Fairchild
Reach Compliance Code unknown unknow unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A
Collector-emitter maximum voltage 180 V 180 V 180 V 180 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 160 100 160 100
JEDEC-95 code TO-126 TO-126 TO-126 TO-126
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
JESD-609 code e3 e3 e3 e3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
Maximum power dissipation(Abs) 8 W 8 W 8 W 8 W
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO
Terminal surface Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn) Matte Tin (Sn)
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz 200 MHz 200 MHz
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