KSC2682
KSC2682
Audio Frequency Power Amplifier
• Complement to KSA1142
1
TO-126
2.Collector
3.Base
1. Emitter
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
P
C
T
J
T
STG
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation (T
a
=25°C)
Collector Dissipation (T
C
=25°C)
Junction Temperature
Storage Temperature
Value
180
180
5
100
1.2
8
150
-55 ~ 150
Units
V
V
V
mA
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
I
CBO
I
EBO
h
FE1
h
FE2
V
CE
(sat)
V
BE
(sat)
f
T
C
ob
NF
Parameter
Collector Cut-off Current
Emitter Cut-off Current
* DC Current Gain
* Collector-Emitter Saturation Voltage
* Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Noise Figure
Test Condition
V
CB
= 180V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
I
C
= 50mA, I
B
= 5mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 10V, I
C
= 20mA
V
CB
= 10V, I
E
= 0
f = 1MHz
V
CE
= 10V, I
C
= 1mA
R
S
= 10KΩ, f = 1kHz
90
100
190
200
0.12
0.8
200
3.2
4
5.0
Min.
Typ.
Max.
1.0
1.0
320
0.5
1.5
V
V
MHz
pF
dB
Units
µA
µA
* Pulse Test: PW≤350µs, Duty Cycle≤2%
h
FE
Classificntion
Classification
h
FE2
O
100 ~ 200
Y
160 ~ 320
©2000 Fairchild Semiconductor International
Rev. A, February 2000
KSC2682
Typical Characteristics
160
1000
Pulse Test
V
CE
= 5V
Ic[mA], COLLECTOR CURRENT
140
h
FE
, DC CURRENT GAIN
120
100
I
B
=500uA I
B
=450uA
I
B
=400uA
100
80
I
B
=350uA
I
B
=300uA
I
B
=250uA
60
I
B
=200uA
40
10
I
B
=150uA
I
B
=100uA
I
B
=50uA
I
B
=0
0
20
40
60
80
100
120
140
160
20
1
0.1
1
10
100
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
I
C
[mA], COLLECTOR CURRENT
Figure 1. Static Characteristic
Figure 2. DC current Gain
V
CE
(sat), V
BE
(sat)[V], SATURATION VOLTAGE
10
100
I
C
= 10 I
B
I
E
=0
f=1.0MHz
1
V
BE
(sat)
C
ob
[pF], CAPACITANCE
10
0.1
V
CE
(sat)
0.01
0.1
1
1
10
100
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
V
CB
[V], COLLECTOR-BASE VOLTAGE
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Figure 4. Collector Output Capacitance
f
T
[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
1000
1000
V
CE
= 10V
I
C
[A], COLLECTOR CURRENT
IcMAX(DC)
100
10ms
1m
s
D
C
(5
0m
100
s)
10
10
1
10
100
1
1
10
100
1000
I
C
[mA], COLLECTOR CURRENT
V
CE
[V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Current Gain Bandwidth Product
Figure 6. Safe Operating Area
©2000 Fairchild Semiconductor International
V
CEO
MAX
Rev. A, February 2000
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
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E
2
CMOS™
FACT™
FACT Quiet Series™
FAST
®
FASTr™
GTO™
DISCLAIMER
HiSeC™
ISOPLANAR™
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POP™
PowerTrench
®
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QS™
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SuperSOT™-8
SyncFET™
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UHC™
VCX™
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PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY
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NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
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FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR
INTERNATIONAL.
As used herein:
1. Life support devices or systems are devices or systems
which, (a) are intended for surgical implant into the body,
or (b) support or sustain life, or (c) whose failure to perform
when properly used in accordance with instructions for use
provided in the labeling, can be reasonably expected to
result in significant injury to the user.
2. A critical component is any component of a life support
device or system whose failure to perform can be
reasonably expected to cause the failure of the life support
device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or In
Design
First Production
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
©2000 Fairchild Semiconductor International
Rev. E
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