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BCR 48PN H6727

Description
trans prebias npn/pnp sot363
Categorysemiconductor    Discrete semiconductor   
File Size531KB,8 Pages
ManufacturerInfineon
Websitehttp://www.infineon.com/
Environmental Compliance  
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BCR 48PN H6727 Overview

trans prebias npn/pnp sot363

BCR 48PN H6727 Parametric

Parameter NameAttribute value
Datasheets
BCR48PN
Product Photos
SOT-363 PKG
PCN Obsolescence/ EOL
Multiple Devices 18/Sep/2013
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Arrays, Pre-Biased
PackagingTape & Reel (TR)
Transistor Type1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (Ic) (Max)70mA, 100mA
Voltage - Collector Emitter Breakdown (Max)50V
Resistor - Base (R1) (Ohms)47k, 2.2k
Resistor - Emitter Base (R2) (Ohms)47k
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)-
Frequency - Transiti100MHz, 200MHz
Power - Max250mW
Mounting TypeSurface Mou
Package / Case6-VSSOP, SC-88, SOT-363
Supplier Device PackagePG-SOT363-6
Other NamesSP000784046
BCR48PN
NPN/PNP Silicon Digital Transistor Array
Switching circuit, inverter, interface circuit,
driver circuit
Two (galvanic) internal isolated NPN/PNP
Transistors in one package
Built in bias resistor
NPN:
R
1
= 47kΩ,
R
2
= 47kΩ
PNP:
R
1
= 2.2kΩ,
R
2
= 47kΩ
Pb-free (RoHS compliant) package
Qualified according AEC Q101
C1
6
B2
5
E2
4
4
5
6
1
2
3
R
2
Top View
654
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
R
1
TR1
R
2
1
E1
2
B1
R
1
TR2
3
C2
EHA07176
Position in tape: pin 1
opposite of feed hole side
EHA07193
Type
BCR48PN
Maximum Ratings
Parameter
Marking
WTs
Pin Configuration
Package
1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT363
Symbol
V
CEO
V
CBO
NPN
PNP
NPN
PNP
NPN
PNP
V
i(fwd)
V
i(fwd)
V
i(rev)
V
i(rev)
I
C
I
C
P
tot
T
j
T
stg
Value
50
50
80
20
10
5
70
100
250
150
-65...+150
Unit
V
Collector-emitter voltage
Collector-base voltage
Input forward voltage
Input forward voltage
Input reverse voltage
Input reverse voltage
DC collector current
DC collector current
Junction temperature
Storage temperature
mA
mW
°C
Total power dissipation,
T
S
= 115 °C
1
2011-07-28

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