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2SA1362-GR(T5L,F,T

Description
transistor pnp 15v 800ma smini
Categorysemiconductor    Discrete semiconductor   
File Size182KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Environmental Compliance  
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2SA1362-GR(T5L,F,T Overview

transistor pnp 15v 800ma smini

2SA1362-GR(T5L,F,T Parametric

Parameter NameAttribute value
Datasheets
2SA1362
Product Photos
SOT-23-3
Standard Package3,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypePNP
Current - Collector (Ic) (Max)800mA
Voltage - Collector Emitter Breakdown (Max)15V
Vce Saturation (Max) @ Ib, Ic200mV @ 8mA, 400mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce200 @ 100mA, 1V
Power - Max200mW
Frequency - Transiti120MHz
Mounting TypeSurface Mou
Package / CaseTO-236-3, SC-59, SOT-23-3
Supplier Device PackageS-Mini
Other Names2SA1362-GR(T5LFT2SA1362GRT5LFT
2SA1362
TOSHIBA Transistor
Silicon PNP Epitaxial Type (PCT process)
2SA1362
Low Frequency Power Amplifier Applications
Power Switching Applications
High DC current gain: h
FE
= 120 to 400
Low saturation voltage: V
CE (sat)
=
−0.2
V (max)
(I
C
=
−400
mA, I
B
=
−8
mA)
Suitable for driver stage of small motor
Small package
Unit: mm
Absolute Maximum Ratings
(Ta
=
25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Rating
−15
−15
−5
−800
−160
200
150
−55
to 150
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
TOSHIBA
TO-236MOD
SC-59
2-3F1A
Weight: 0.012 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature, etc.) may cause this product to
decrease in the reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Marking
Start of commercial production
1983-01
1
2014-03-01

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Description transistor pnp 15v 800ma smini Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.8A I(C), 15V V(BR)CEO, 1-Element, PNP, Silicon Small Signal Bipolar Transistor Small Signal Bipolar Transistor
Reach Compliance Code - unknow unknow unknow unknown unknown
Base Number Matches - 1 1 1 1 1

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