New Product
BU2006 thru BU2010
Vishay General Semiconductor
Enhanced PowerBridge
®
Rectifiers
PowerBridge
®
~
+
Case Style BU
~
-
-
~
~
+
FEATURES
• UL recognition file number E309391
(QQQX2) UL 1557 (see *)
• Thin single in-line package
• Available for BU-5S lead forming option
(part number with “5S” suffix, e.g.
BU20065S)
• Superior thermal conductivity
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• Compliant to RoHS Directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
•
Halogen-free according to IEC 61249-2-21
definition
TYPICAL APPLICATIONS
General purpose use in AC/DC bridge full wave
rectification for switching power supply, home
appliances and white-goods applications.
MECHANICAL DATA
Case:
BU
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-M3 - halogen-free, RoHS compliant, and
commercial grade
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test
Polarity:
As marked on body
Mounting Torque:
10 cm-kg (8.8 inches-lbs) max.
Recommended Torque:
5.7 cm-kg (5 inches-lbs)
+
~
~
-
* Tested to UL standard for safety electrically isolated semiconductor
devices. UL 1557 4th edition.
Dielectric tested to maximum case, storage and junction
temperature to 150 °C to withstand 1500 V.
Epoxy meets UL 94 V-0 flammability rating.
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
at I
F
= 10 A
T
J
max.
20 A
600 V, 800 V, 1000 V
240 A
5 µA
0.85 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Average rectified forward current (Fig. 1, 2)
Non-repetitive peak forward surge current
8.3 ms single sine-wave, T
J
= 25 °C
Rating for fusing (t < 8.3 ms) T
J
= 25 °C
Operating junction and storage temperature range
Notes
(1)
(2)
SYMBOL
V
RRM
T
C
= 61 °C
(1)
T
A
= 25 °C
(2)
I
O
I
FSM
I
2
t
T
J
, T
STG
BU2006
600
BU2008
800
20
3.5
240
239
- 55 to + 150
BU2010
1000
UNIT
V
A
A
A
2
s
°C
With 60 W air cooled heatsink
Without heatsink, free air
Document Number: 89298
Revision: 15-Mar-11
www.vishay.com
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
1
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
BU2006 thru BU2010
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum instantaneous forward
voltage per diode
(1)
Maximum reverse current per diode
Typical junction capacitance per diode
Note
(1)
TEST CONDITIONS
I
F
= 10 A
rated V
R
4.0 V, 1 MHz
T
A
= 25 °C
T
A
= 125 °C
T
A
= 25 °C
T
A
= 125 °C
SYMBOL
V
F
I
R
C
J
TYP.
0.95
0.85
-
110
95
MAX.
1.05
0.95
5.0
350
-
UNIT
V
µA
pF
Pulse test: 300 µs pulse width, 1 % duty cycle
THERMAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance
Notes
(1)
(2)
SYMBOL
R
JC
(1)
R
JA
(2)
BU2006
BU2008
2.4
20
BU2010
UNIT
°C/W
With 60 W air cooled heatsink
Without heatsink, free air
ORDERING INFORMATION
(Example)
PREFERRED P/N
BU2006-M3/45
BU2006-M3/51
BU20065S-M3/45
UNIT WEIGHT (g)
4.76
4.76
4.76
PREFERRED PACKAGE CODE
45
51
45
BASE QUANTITY
20
250
20
DELIVERY MODE
Tube
Paper tray
Tube
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
24
5
20
Average Forward Rectified Current (A)
Average Forward Output Current (A)
4
16
12
With
Heatsink
Sine-Wave, R-Load
T
C
Measured at Device Bottom
T
C
T
C
3
2
Without
Heatsink
Sine-Wave, R-Load
Free Air, T
A
8
4
1
0
0
25
50
75
100
125
150
0
0
25
50
75
100
125
150
Case Temperature (°C)
Ambient Temperature (°C)
Figure 1. Derating Curve Output Rectified Current
Figure 2. Forward Current Derating Curve
www.vishay.com
2
Document Number: 89298
For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
BU2006 thru BU2010
Vishay General Semiconductor
50
1000
Instantaneous Reverse Current (µA)
Forward Power Dissipation (W)
T
J
= 150 °C
100
T
J
= 125 °C
10
40
30
20
1
T
J
= 25 °C
10
0
0
4
8
12
16
20
24
0.1
10
20
30
40
50
60
70
80
90
100
Average Forward Current (A)
Percent of Rated Peak Reverse
Voltage
(%)
Figure 3. Forward Power Dissipation
Figure 5. Typical Reverse Characteristics Per Diode
100
1000
T
J
= 150 °C
Instantaneous Forward Current (A)
10
T
J
= 125 °C
1
Junction Capacitance (pF)
1.0
1.1
100
0.1
T
J
= 25 °C
0.01
0.3
10
0.4
0.5
0.6
0.7
0.8
0.9
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 4. Typical Forward Characteristics Per Diode
Figure 6. Typical Junction Capacitance Per Diode
Document Number: 89298
Revision: 15-Mar-11
www.vishay.com
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
3
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
BU2006 thru BU2010
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
Case Type BU
0.880 (22.3)
0.860 (21.8)
0.020R (TYP.)
0.125 (3.2) x 45°
Chamfer
0.160 (4.1)
0.140 (3.5)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
0.085 (2.16)
0.065 (1.65)
5°
TYP.
0.048 (1.23)
0.039 (1.00)
0.710 (18.0)
0.690 (17.5)
0.050 (1.27)
0.040 (1.02)
0.100 (2.54)
0.085 (2.16)
9°
TYP.
0.161 (4.10)
0.142 (3.60)
View
A
0.080 (2.03)
0.060 (1.52)
0.075
(1.9) R
+
~
~
-
0.190 (4.83)
0.210 (5.33)
0.080 (2.03)
0.065 (1.65)
0.028 (0.72)
0.020 (0.52)
Polarity shown on front side of case, positive lead
beveled
corner
0.055 (1.385) REF.
0.094 (2.39) x 45° REF.
R 0.11
(2.78) REF.
0.64 (16.28) REF.
0.62 (15.78) REF.
R 0.10
(2.60) REF.
0.055 (1.385) REF.
www.vishay.com
4
Document Number: 89298
For technical questions within your region, please contact one of the following:
Revision: 15-Mar-11
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
New Product
BU2006 thru BU2010
Vishay General Semiconductor
FORMING SPECIFICATION: BU-5S
in inches (millimeters)
0.161 (4.10)
0.142 (3.60)
0.880 (22.3)
0.860 (21.8)
0.125 (3.2) x 45°
Chamfer
0.020R (TYP.)
0.310 (7.9)
0.290 (7.4)
0.740 (18.8)
0.720 (18.3)
9°
TYP.
0.160 (4.1)
0.140 (3.5)
0.075
(1.9) R
0.080 (2.03)
0.060 (1.52)
+
~ ~
-
0.085 (2.16)
0.065 (1.65)
0.100 (2.54)
0.085 (2.16)
0.219 (5.55)
MAX.
5°
TYP.
0.050 (1.27)
0.040 (1.02)
0.213 (5.40)
0.173 (4.40)
0.417 (10.60)
0.370 (9.40)
0.134 (3.40)
0.087 (2.20)
0.319 (8.10)
0.272 (6.90)
0.319 (8.10)
0.272 (6.90)
0.315 (8.0)
0.276 (7.0)
0.028 (0.72)
0.020 (0.52)
0.080 (2.03)
0.065 (1.65)
APPLICATION NOTE
(1) Device UL approved for safety use dielectric strength of 1500 V.
(2) If device is mounted in Floating Ground (F. G.) application, insulator is recommended to use to meet safety requirement.
(3) Heat sink shape recommendation:
(3)
Heatsink
2.5 mm MIN.
2.5 mm MIN.
By Safety Requirements
Document Number: 89298
Revision: 15-Mar-11
www.vishay.com
For technical questions within your region, please contact one of the following:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
5
This datasheet is subject to change without notice.
THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
京公网安备 11010802033920号
EEWORLD
