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CAT28LV64N-30TE13

Description
8KX8 EEPROM 3V, 300ns, PQCC32, PLASTIC, LCC-32
Categorystorage    storage   
File Size146KB,15 Pages
ManufacturerON Semiconductor
Websitehttp://www.onsemi.cn
Download Datasheet Parametric View All

CAT28LV64N-30TE13 Overview

8KX8 EEPROM 3V, 300ns, PQCC32, PLASTIC, LCC-32

CAT28LV64N-30TE13 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerON Semiconductor
Parts packaging codeQFJ
package instructionQCCJ,
Contacts32
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum access time300 ns
JESD-30 codeR-PQCC-J32
JESD-609 codee0
length13.97 mm
memory density65536 bit
Memory IC TypeEEPROM
memory width8
Humidity sensitivity level3
Number of functions1
Number of terminals32
word count8192 words
character code8000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize8KX8
Package body materialPLASTIC/EPOXY
encapsulated codeQCCJ
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)240
Programming voltage3 V
Certification statusNot Qualified
Maximum seat height3.55 mm
Maximum supply voltage (Vsup)3.6 V
Minimum supply voltage (Vsup)3 V
Nominal supply voltage (Vsup)3.3 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal surfaceTIN LEAD
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperature30
width11.43 mm
Base Number Matches1
CAT28LV64
64 kb CMOS Parallel
EEPROM
Description
The CAT28LV64 is a low voltage, low power, CMOS Parallel
EEPROM organized as 8K x 8−bits. It requires a simple interface for
in−system programming. On−chip address and data latches,
self−timed write cycle with auto−clear and V
CC
power up/down write
protection eliminate additional timing and protection hardware. DATA
Polling and Toggle status bit signal the start and end of the self−timed
write cycle. Additionally, the CAT28LV64 features hardware and
software write protection.
The CAT28LV64 is manufactured using ON Semiconductor’s
advanced CMOS floating gate technology. It is designed to endure
100,000 program/erase cycles and has a data retention of 100 years.
The device is available in JEDEC approved 28−pin DIP, 28−pin TSOP,
28−pin SOIC or 32−pin PLCC packages.
Features
http://onsemi.com
PDIP−28
P, L SUFFIX
CASE 646AE
SOIC−28
J, K, W, X SUFFIX
CASE 751BM
3.0 V to 3.6 V Supply
Read Access Times:
– 150/200/250 ns
Low Power CMOS Dissipation:
– Active: 8 mA Max.
– Standby: 100
mA
Max.
Simple Write Operation:
– On−chip Address and Data Latches
– Self−timed Write Cycle with Auto−clear
Fast Write Cycle Time:
– 5 ms Max.
Commercial, Industrial and Automotive Temperature Ranges
CMOS and TTL Compatible I/O
Automatic Page Write Operation:
– 1 to 32 bytes in 5 ms
– Page Load Timer
End of Write Detection:
– Toggle bit
– DATA Polling
Hardware and Software Write Protection
100,000 Program/Erase Cycles
100 Year Data Retention
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
PLCC−32
N, G SUFFIX
CASE 776AK
TSOP−28
H13 SUFFIX
CASE 318AE
PIN FUNCTION
Pin Name
A
0
−A
12
I/O
0
−I/O
7
CE
OE
WE
V
CC
V
SS
NC
Function
Address Inputs
Data Inputs/Outputs
Chip Enable
Output Enable
Write Enable
3.0 V to 3.6 V Supply
Ground
No Connect
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 15 of this data sheet.
©
Semiconductor Components Industries, LLC, 2009
October, 2009
Rev. 7
1
Publication Order Number:
CAT28LV64/D
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