MITSUBISHI IGBT MODULES
CM400HA-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
A
Q
S
M
H
N
V–DIA.(4 TYP.)
E
E
C
D
F
CM
G C
G
X–M4 THD.
(2 TYP.)
P
B
K
R
U
K
W–M6 THD.
(2 TYP.)
E
J
L
Description:
Mitsubishi IGBT Modules
are designed for use in switching
applications. Each module consists
of one IGBT in a single configura-
tion with a reverse-connected su-
per-fast recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified sys-
tem assembly and thermal man-
agement.
Features:
Low Drive Power
Low V
CE(sat)
Discrete Super-Fast Recovery
Free-Wheel Diode
High Frequency Operation
Isolated Baseplate for Easy
Heat Sinking
Applications:
AC Motor Control
Motion/Servo Control
UPS
Welding Power Supplies
Ordering Information:
Example: Select the complete part
module number you desire from
the table below -i.e. CM400HA-
12H is a 600V (V
CES
), 400 Am-
pere Single IGBT Module.
Type
CM
Current Rating
Amperes
400
V
CES
Volts (x 50)
12
T
E
E
G
C
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
J
K
L
Inches
4.21
3.661±0.01
2.44
1.89±0.01
1.42 Max.
1.34
1.18
1.14
0.98 Max.
0.94
0.93
Millimeters
107.0
93.0±0.25
62.0
48.0±0.25
36.0 Max.
34.0
30.0
29.0
25.0 Max.
24.0
23.5
Dimensions
M
N
P
Q
R
S
T
U
V
W
X
Inches
0.83
0.69
0.63
0.51
0.43
0.35
0.28
0.12
0.26 Dia.
M6 Metric
M4 Metric
Millimeters
21.0
17.5
16.0
13.0
11.0
9.0
7.0
3.0
Dia. 6.5
M6
M4
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
Absolute Maximum Ratings, T
j
= 25
°
C unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M6 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to BAseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
–
V
iso
CM600HU-12H
-40 to 150
-40 to 125
600
±20
400
800*
400
800*
1500
1.96~2.94
1.96~2.94
0.98~1.47
400
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
N·m
N·m
N·m
Grams
Vrms
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Static Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
GES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V
I
C
= 400A, V
GE
= 15V, T
j
= 150°C
Total Gate Charge
Emitter-Collector Voltage
V
CC
= 400V, I
C
= 400A, V
GE
= 15V
I
E
= 400A, V
GE
= 0V
Min.
–
–
4.5
–
–
–
–
Typ.
–
–
6.0
2.1
2.15
1200
–
Max.
1.0
0.5
7.5
2.8**
–
–
2.8
Units
mA
µA
Volts
Volts
Volts
nC
Volts
** Pulse width and repetition rate should be such that device junction temperature rise is negligible.
Dynamic Electrical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Resistive
Load
Switching
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
E
= 400A, di
E
/dt = –800A/µs
I
E
= 400A, di
E
/dt = –800A/µs
V
CC
= 300V, I
C
= 400A,
V
GE1
= V
GE2
= 15V, R
G
= 1.6Ω
V
GE
= 0V, V
CE
= 10V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
1.08
Max.
40
14
8
350
600
350
300
110
–
Units
nF
nF
nF
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
Thermal and Mechanical Characteristics, T
j
= 25
°
C unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Case
Contact Thermal Resistance
Symbol
R
th(j-c)
R
th(j-c)
R
th(c-f)
Test Conditions
Per IGBT
Per FWDi
Per Module, Thermal Grease Applied
Min.
–
–
–
Typ.
–
–
–
Max.
0.085
0.18
0.040
Units
°C/W
°C/W
°C/W
Sep.1998
MITSUBISHI IGBT MODULES
CM400HA-12H
HIGH POWER SWITCHING USE
INSULATED TYPE
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
TRANSFER CHARACTERISTICS
(TYPICAL)
800
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
5
T
j
= 25
o
C
COLLECTOR CURRENT, I
C
, (AMPERES)
800
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
V
CE
= 10V
T
j
= 25°C
T
j
= 125°C
COLLECTOR CURRENT, I
C
, (AMPERES)
V
GE
= 20V
15
12
4
600
11
600
3
400
10
400
2
200
7
9
8
1
200
0
0
2
4
6
8
10
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
200
400
600
800
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
10
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
10
3
T
j
= 25°C
T
j
= 25°C
CAPACITANCE,
C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
2
C
ies
8
I
C
= 800A
10
1
C
res
6
I
C
= 400A
10
2
4
10
0
C
oes
V
GE
= 0V
2
I
C
= 160A
0
0
4
8
12
16
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
0
0.8
1.6
2.4
3.2
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
-1
10
-1
10
0
10
1
10
2
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
t
d(off)
10
2
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
I
C
= 400A
16
SWITCHING TIME, (ns)
t
f
t
d(on)
I
rr
V
CC
= 200V
12
10
2
V
CC
= 300V
V
GE
= ±15V
R
G
= 1.6Ω
T
j
= 125°C
10
2
t
rr
10
1
V
CC
= 300V
8
t
r
di/dt = -800A/µsec
T
j
= 25°C
4
10
1
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
10
1
10
1
10
0
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
400
800
1200
1600
2000
GATE CHARGE, Q
G
, (nC)
Sep.1998
Analogue and Mixed Signal
京公网安备 11010802033920号
EEWORLD
