CM400HU-24F
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
Trench Gate Design
Single IGBTMOD™
400 Amperes/1200 Volts
N (2 TYP)
A
D
G
F
G
C
L
M (2 TYP.)
E
C
P
E
B
E
CM
H
L (4 TYP)
J
K
R
TC MEASURING
POINT
Q
C
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a single
configuration with a reverse-con-
nected super-fast recovery free-
wheel diode. All components and
interconnects are isolated from the
heat sinking baseplate, offering
simplified system assembly and
thermal management.
Features:
□
Low Drive Power
□
Low V
CE(sat)
□
Discrete Super-Fast Recovery
Free-Wheel Diode
□
Isolated Baseplate for Easy
Heat Sinking
Applications:
□
AC Motor Control
□
UPS
□
Battery Powered Supplies
E
C
RTC
E
G
Outline Drawing and Circuit Diagram
Dimensions
A
B
C
D
E
F
G
H
Inches
4.21
2.44
Millimeters
107.0
62.0
Dimensions
J
K
L
M
N
P
Q
R
Inches
1.02
1.14
0.26 Dia.
M8
M4
0.49
Millimeters
26.0
29.0
6.5 Dia.
M8
M4
12.55
1.34 +0.04/-0.02 34.0 +1.0/-0.5
3.66±0.01
1.88±0.01
0.37
0.39
0.53
93.0±0.25
48.0±0.25
9.5
10.0
13.5
Ordering Information:
Example: Select the complete
module number you desire from
the table - i.e. CM400HU-24F is a
1200V (V
CES
), 400 Ampere Single
IGBTMOD™ Power Module.
Type
CM
Current Rating
Amperes
400
V
CES
Volts (x 50)
24
1.02 +0.04/-0.02 26.0 +1.0/-0.5
0.81
20.5
1
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HU-24F
Trench Gate Design Single IGBTMOD™
400 Amperes/1200 Volts
Absolute Maximum Ratings,
T
j
= 25
°C
unless otherwise specified
Ratings
Junction Temperature
Storage Temperature
Collector-Emitter Voltage (G-E SHORT)
Gate-Emitter Voltage (C-E SHORT)
Collector Current (T
c
= 25°C)
Peak Collector Current (T
j
≤
150°C)
Emitter Current** (T
c
= 25°C)
Peak Emitter Current**
Maximum Collector Dissipation (T
c
= 25°C)
Mounting Torque, M8 Main Terminal
Mounting Torque, M6 Mounting
Mounting Torque, M4 Terminal
Weight
Isolation Voltage (Main Terminal to Baseplate, AC 1 min.)
Symbol
T
j
T
stg
V
CES
V
GES
I
C
I
CM
I
E
I
EM
P
c
–
–
–
–
V
iso
CM400HU-24F
-40 to 150
-40 to 125
1200
±20
400
800*
400
800*
1600
95
40
15
450
2500
Units
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
Grams
Volts
Static Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Collector-Cutoff Current
Gate Leakage Voltage
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Symbol
I
CES
I
GES
V
GE(th)
V
CE(sat)
Q
G
V
EC
Test Conditions
V
CE
= V
CES
, V
GE
= 0V
V
GE
= V
CES
, V
CE
= 0V
I
C
= 40mA, V
CE
= 10V
I
C
= 400A, V
GE
= 15V, T
j
= 25°C
I
C
= 400A, V
GE
= 15V, T
j
= 125°C
Total Gate Charge
Emitter-Collector Voltage**
V
CC
= 600V, I
C
= 400A, V
GE
= 15V
I
E
= 400A, V
GE
= 0V
Min.
–
–
5
–
–
–
–
Typ.
–
–
6
1.8
1.9
4400
–
Max.
2
80
7
2.4
–
–
3.2
Units
mA
µA
Volts
Volts
Volts
nC
Volts
* Pulse width and repetition rate should be such that the device junction temperature (T
j
) does not exceed T
j(max)
rating.
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
2
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HU-24F
Trench Gate Design Single IGBTMOD™
400 Amperes/1200 Volts
Dynamic Electrical Characteristics,
T
j
= 25
°C
unless otherwise specified
Characteristics
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Inductive
Load
Switch
Times
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Symbol
C
ies
C
oes
C
res
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
V
CC
= 600V, I
C
= 400A,
V
GE1
= V
GE2
= 15V,
R
G
= 0.78 ,
Inductive Load
Switching Operation
I
E
= 400A
V
CE
= 10V, V
GE
= 0V
Test Conditions
Min.
–
–
–
–
–
–
–
–
–
Typ.
–
–
–
–
–
–
–
–
23.6
Max.
160
6.8
4
300
100
600
300
350
–
Units
nf
nf
nf
ns
ns
ns
ns
ns
µC
Diode Reverse Recovery Time**
Diode Reverse Recovery Charge**
Thermal and Mechanical Characteristics, T
j
= 25
°C
unless otherwise specified
Characteristics
Thermal Resistance, Junction to Case
Symbol
R
th(j-c)
Q
R
th(j-c)
D
R
th(j-c)
'Q
R
th(c-f)
Test Conditions
Per IGBT, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per FWDi, T
c
Reference
Point per Outline Drawing
Thermal Resistance, Junction to Case
Per IGBT,
T
c
Reference Point Under Chip
Contact Thermal Resistance
Per Module, Thermal Grease Applied
–
0.02
–
°C/W
** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
Typ.
Max.
0.078
Units
°C/W
°C/W
°C/W
–
–
0.09
–
0.04
3
Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272
CM400HU-24F
Trench Gate Design Single IGBTMOD™
400 Amperes/1200 Volts
OUTPUT CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(TYPICAL)
800
COLLECTOR CURRENT, I
C
, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
V
GE
= 20V
COLLECTOR-EMITTER
SATURATION VOLTAGE, V
CE(sat)
, (VOLTS)
T
j
= 25
o
C
11
15
10
3
9.5
V
GE
= 15V
T
j
= 25°C
T
j
= 125°C
5
T
j
= 25°C
600
4
3
I
C
= 800A
9
2
400
8.5
2
1
I
C
= 400A
I
C
= 160A
1
200
8
0
0
1
2
3
4
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
0
0
200
400
600
800
COLLECTOR-CURRENT, I
C
, (AMPERES)
0
0
6
8
10 12 14
16
18 20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
CAPACITANCE VS. V
CE
(TYPICAL)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10
3
T
j
= 25°C
CAPACITANCE, C
ies
, C
oes
, C
res
, (nF)
EMITTER CURRENT, I
E
, (AMPERES)
10
3
10
3
t
d(off)
t
f
t
d(on)
10
2
SWITCHING TIME, (ns)
C
ies
10
2
10
2
t
r
10
1
V
GE
= 0V
C
oes
C
res
10
1
V
CC
= 600V
V
GE
=
±15V
R
G
= 0.78
Ω
T
j
= 125°C
Inductive Load
10
1
0
1.0
2.0
3.0
4.0
EMITTER-COLLECTOR VOLTAGE, V
EC
, (VOLTS)
10
0
10
-1
10
0
10
1
10
2
10
0
10
1
10
2
COLLECTOR CURRENT, I
C
, (AMPERES)
10
3
COLLECTOR-EMITTER VOLTAGE, V
CE
, (VOLTS)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z
th(j-c)
Z
th
= R
th
• (NORMALIZED VALUE)
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
REVERSE RECOVERY CURRENT, I
rr
, (AMPERES)
GATE CHARGE, V
GE
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDi)
10
3
REVERSE RECOVERY TIME, t
rr
, (ns)
10
3
20
GATE-EMITTER VOLTAGE, V
GE
, (VOLTS)
10
1
10
-3
10
-2
10
-1
10
0
10
1
I
C
= 400A
16
12
8
4
V
CC
= 400V
V
CC
= 600V
10
0
Per Unit Base
R
th(j-c)
= 0.078°C/W (IGBT)
R
th(j-c)
= 0.09°C/W (FWDi)
Single Pulse
T
C
= 25°C
I
rr
10
2
t
rr
V
CC
= 600V
V
GE
=
±15V
R
G
= 0.78
Ω
T
j
= 25°C
Inductive Load
10
2
10
-1
10
-1
10
-2
10
-2
10
1
10
1
10
1
10
2
EMITTER CURRENT, I
E
, (AMPERES)
10
3
0
0
1000 2000 3000 4000 5000 6000
GATE CHARGE, Q
G
, (nC)
10
-3
10
-5
TIME, (s)
10
-4
10
-3
10
-3
4
4
京公网安备 11010802033920号
EEWORLD
