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IRF730APBF

Description
VISHAY SILICONIX - IRF730APBF - N CHANNEL MOSFET; 400V; 5.5A TO-220
CategoryDiscrete semiconductor    The transistor   
File Size183KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Environmental Compliance
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VISHAY SILICONIX - IRF730APBF - N CHANNEL MOSFET; 400V; 5.5A TO-220

IRF730APBF Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompli
Avalanche Energy Efficiency Rating (Eas)290 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage400 V
Maximum drain current (Abs) (ID)5.5 A
Maximum drain current (ID)5.5 A
Maximum drain-source on-resistance1 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)250
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)74 W
Maximum pulsed drain current (IDM)22 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceMATTE TIN OVER NICKEL
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperature30
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 94976
SMPS
MOSFET
Applications
l
Switch Mode Power Supply (SMPS)
l
Uninterruptable Power Supply
l
High speed power switching
l
Lead-Free
Benefits
l
Low Gate Charge Qg results in Simple
Drive Requirement
l
Improved Gate, Avalanche and dynamic
dv/dt Ruggedness
l
Fully Characterized Capacitance and
Avalanche Voltage and Current
l
Effective Coss Specified (See AN1001)
IRF730APbF
HEXFET
®
Power MOSFET
V
DSS
400V
Rds(on) max
1.0Ω
I
D
5.5A
TO-220AB
G DS
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torqe, 6-32 or M3 screw
Max.
5.5
3.5
22
74
0.6
± 30
4.6
-55 to + 150
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
V/ns
°C
Typical SMPS Topologies:
l
l
Single Transistor Flyback Xfmr. Reset
Single Transistor Forward Xfmr. Reset
(Both US Line input only).
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