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IRHM3150

Description
RADIATION HARDENED POWER MOSFET THRU-HOLE
CategoryDiscrete semiconductor    The transistor   
File Size444KB,12 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric Compare View All

IRHM3150 Overview

RADIATION HARDENED POWER MOSFET THRU-HOLE

IRHM3150 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
MakerInternational Rectifier ( Infineon )
Parts packaging codeTO-254AA
package instructionFLANGE MOUNT, S-MSFM-P3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)500 mJ
Shell connectionISOLATED
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (ID)34 A
Maximum drain-source on-resistance0.076 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-254AA
JESD-30 codeS-MSFM-P3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialMETAL
Package shapeSQUARE
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum pulsed drain current (IDM)136 A
Certification statusNot Qualified
surface mountNO
Terminal formPIN/PEG
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD - 90675C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM7150
IRHM3150
IRHM4150
IRHM8150
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.065Ω
0.065Ω
0.065Ω
0.065Ω
REF: MIL-PRF-19500/603
®
RAD Hard HEXFET
TECHNOLOGY
™
IRHM7150
JANSR2N7268
100V, N-CHANNEL
I
D
34A
34A
34A
34A
QPL Part Number
JANSR2N7268
JANSF2N7268
JANSG2N7268
JANSH2N7268
TO-254AA
International Rectifier’s RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
www.irf.com
1
8/14/01

IRHM3150 Related Products

IRHM3150 IRHM4150 IRHM7150 IRHM8150 JANSF2N7268 JANSG2N7268 JANSH2N7268 JANSR2N7268
Description RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE RADIATION HARDENED POWER MOSFET THRU-HOLE
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Parts packaging code TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA
package instruction FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3 FLANGE MOUNT, S-MSFM-P3
Contacts 3 3 3 3 3 3 3 3
Reach Compliance Code unknow compliant compli compliant compliant unknow unknown unknown
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 3A001.A.1.A EAR99
Avalanche Energy Efficiency Rating (Eas) 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ 500 mJ
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 100 V 100 V 100 V 100 V 100 V 100 V 100 V 100 V
Maximum drain current (ID) 34 A 34 A 34 A 34 A 34 A 34 A 34 A 34 A
Maximum drain-source on-resistance 0.076 Ω 0.076 Ω 0.076 Ω 0.076 Ω 0.065 Ω 0.065 Ω 0.065 Ω 0.065 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA TO-254AA
JESD-30 code S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3 S-MSFM-P3
Number of components 1 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Package body material METAL METAL METAL METAL METAL METAL METAL METAL
Package shape SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE SQUARE
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL N-CHANNEL
Maximum pulsed drain current (IDM) 136 A 136 A 136 A 136 A 136 A 136 A 136 A 136 A
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO NO
Terminal form PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG PIN/PEG
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Maker International Rectifier ( Infineon ) International Rectifier ( Infineon ) - International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon ) International Rectifier ( Infineon )
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C - 150 °C - -
Other features - - RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED RADIATION HARDENED
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