PD - 90675C
RADIATION HARDENED
POWER MOSFET
THRU-HOLE (TO-254AA)
Product Summary
Part Number
IRHM7150
IRHM3150
IRHM4150
IRHM8150
Radiation Level
100K Rads (Si)
300K Rads (Si)
600K Rads (Si)
1000K Rads (Si)
R
DS(on)
0.065Ω
0.065Ω
0.065Ω
0.065Ω
REF: MIL-PRF-19500/603
®
RAD Hard HEXFET
TECHNOLOGY
IRHM7150
JANSR2N7268
100V, N-CHANNEL
I
D
34A
34A
34A
34A
QPL Part Number
JANSR2N7268
JANSF2N7268
JANSG2N7268
JANSH2N7268
TO-254AA
International Rectifiers RADHard HEXFET
®
technol-
ogy provides high performance power MOSFETs for
space applications. This technology has over a de-
cade of proven performance and reliability in satellite
applications. These devices have been character-
ized for both Total Dose and Single Event Effects (SEE).
The combination of low Rdson and low gate charge
reduces the power losses in switching applications
such as DC to DC converters and motor control. These
devices retain all of the well established advantages
of MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of elec-
trical parameters.
Features:
!
!
!
!
!
!
!
!
!
Single Event Effect (SEE) Hardened
Low R
DS(on)
Low Total Gate Charge
Proton Tolerant
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Ceramic Eyelets
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
➀
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
➁
Avalanche Current
➀
Repetitive Avalanche Energy
➀
Peak Diode Recovery dv/dt
➂
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
For footnotes refer to the last page
34
21
136
150
1.2
±20
500
34
15
5.5
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
o
C
300 (0.063 in. (1.6mm) from case for 10s)
9.3 (Typical)
g
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1
8/14/01
IRHM7150
Pre-Irradiation
@ Tj = 25°C (Unless Otherwise Specified)
Min
100
2.0
8.0
Electrical Characteristics
Parameter
Typ Max Units
0.13
6.8
V
V/°C
Test Conditions
VGS =0 V, ID = 1.0mA
Reference to 25°C, ID = 1.0mA
VGS = 12V, ID = 21A
"
VGS = 12V, ID = 34A
VDS = VGS, ID = 1.0mA
VDS > 15V, IDS = 21A
"
VDS= 80V,VGS=0V
VDS = 80V
VGS = 0V, TJ = 125°C
VGS = 20V
VGS = -20V
VGS = 12V, ID = 34A
VDS = 50V
VDD = 50V, ID = 14A,
VGS = 12V, RG = 2.35Ω
IGSS
IGSS
Qg
Q gs
Qgd
td
(on)
tr
td
(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (Miller) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
100
-100
160
35
65
45
190
170
130
nA
nC
ns
nH
Ciss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
4300
1200
200
pF
Source-Drain Diode Ratings and Characteristics
Parameter
IS
ISM
VSD
t rr
Q RR
ton
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
➀
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min Typ Max Units
34
136
1.4
570
5.8
A
V
nS
µC
T
j
= 25°C, IS = 34A, VGS = 0V
➃
Tj = 25°C, IF = 34A, di/dt
≤
100A/µs
VDD
≤
50V
➃
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthCS
RthJA
Junction-to-Case
Case-to-sink
Junction-to-Ambient
Min Typ Max Units
0.83
0.21
48
°C/W
Note: Corresponding Spice and Saber models are available on the G&S Website.
For footnotes refer to the last page
2
Ω
BVDSS
Drain-to-Source Breakdown Voltage
∆BV
DSS /∆TJ Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source
On-State Resistance
VGS(th)
Gate Threshold Voltage
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
0.065
Ω
0.076
4.0
V
S( )
25
µA
250
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
VGS = 0V, VDS = 25V
f = 1.0MHz
Test Conditions
Test Conditions
Typical socket mount
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Radiation Characteristics
Pre-Irradiation
IRHM7150
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-3 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics @ Tj = 25°C, Post Total Dose Irradiation
➄➅
Parameter
Min
100K Rads(Si)
Max
4.0
100
-100
25
0.065
0.065
1.4
Min
300 to 1000K Rads (Si)
Max
Units
V
nA
µA
Ω
Ω
V
Test Conditions
BV
DSS
V
/5 JD
I
GSS
I
GSS
I
DSS
R
DS(on)
R
DS(on)
V
SD
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage#
➃
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source#
➃
On-State Resistance (TO-3)
Static Drain-to-Source#
➃
On-State Resistance (TO-254AA)
Diode Forward Voltage#
➃
100
2.0
100
1.25
4.5
100
-100
50
0.09
0.09
1.4
V
GS
= 0V, I
D
= 1.0mA
V
GS
= V
DS
, I
D
= 1.0mA
V
GS
= 20V
V
GS
= -20 V
V
DS
=80V, V
GS
=0V
V
GS
= 12V, I
D
=21A
V
GS
= 12V, I
D
=21A
V
GS
= 0V, IS = 34A
1. Part number IRHM7150 (JANSR2N7268)
2. Part numbers IRHM3150 (JANSF2N7268), IRHM4150 (JANSG2N7268) and IRHM8150 (JANSH2N7268)
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Single Event Effect Safe Operating Area
Ion
Cu
Br
LET
Energy Range
VDS(V)
MeV/(mg/cm )) (MeV)
(µm) @VGS=0V@VGS=-5V@VGS=-10V @VGS=-15V @VGS=-20V @VGS=-25V
28
285
43
100
100
100
80
60
36.8
305
39
100
90
70
50
120
100
80
VDS
60
40
20
0
0
-5
-10
VGS
-15
-20
-25
Cu
Br
Fig a. Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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IRHM7150
Post-Irradiation
Pre-Irradiation
Fig 1. Typical Response of Gate Threshhold
Voltage Vs. Total Dose Exposure
Fig 2. Typical Response of On-State Resistance
Vs. Total Dose Exposure
Fig 3. Typical Response of Transconductance
Vs. Total Dose Exposure
Fig 4. Typical Response of Drain to Source
Breakdown Vs. Total Dose Exposure
4
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Post-Irradiation
Pre-Irradiation
IRHM7150
Fig 5. Typical Zero Gate Voltage Drain
Current Vs. Total Dose Exposure
Fig 6. Typical On-State Resistance Vs.
Neutron Fluence Level
Fig 8a. Gate Stress of V
GSS
Equals 12 Volts During
Radiation
Fig 7. Typical Transient Response of
Rad Hard HEXFET During 1x10
12
Rad (Si)/Sec Exposure
Fig 8b. V
DSS
Stress Equals
80% of B
VDSS
During Radiation
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