PD - 94404
SMPS MOSFET
IRLR8203
IRLU8203
HEXFET
®
Power MOSFET
Applications
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
High Frequency Buck Converters for
Computer Processor Power
Benefits
l
l
l
V
DSS
30V
R
DS(on)
max
6.8mΩ
I
D
110A
Ultra-Low Gate Impedance
Very Low RDS(on) at 4.5V V
GS
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8203
I-Pak
IRLU8203
Absolute Maximum Ratings
Symbol
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
, T
STG
Parameter
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
Max.
30
± 20
110
76
120
140
69
0.92
-55 to + 175
Units
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB mount)*
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
1.09
50
110
Units
°C/W
* When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer to application note #AN-994
Notes
through
are on page 10
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1
03/12/02
IRLR/U8203
Static @ T
J
= 25°C (unless otherwise specified)
Parameter
V
(BR)DSS
Drain-to-Source Breakdown Voltage
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient
R
DS(on)
V
GS(th)
I
DSS
I
GSS
Min. Typ. Max. Units
Conditions
30
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.027 ––– V/°C Reference to 25°C, I
D
= 1mA
–––
5.6
6.8
V
GS
= 10V, I
D
= 15A
mΩ
Static Drain-to-Source On-Resistance
–––
7.1
9.0
V
GS
= 4.5V, I
D
= 12A
Gate Threshold Voltage
1.0
––– 3.0
V
V
DS
= V
GS
, I
D
= 250µA
––– ––– 20
V
DS
= 24V, V
GS
= 0V
µA
Drain-to-Source Leakage Current
––– ––– 100
V
DS
= 24V, V
GS
= 0V, T
J
= 125°C
Gate-to-Source Forward Leakage
––– ––– 200
V
GS
= 20V
nA
Gate-to-Source Reverse Leakage
––– ––– -200
V
GS
= -20V
Dynamic @ T
J
= 25°C (unless otherwise specified)
Symbol
g
fs
Q
g
Q
gs
Q
gd
Q
oss
t
d(on)
t
r
t
d(off)
t
f
C
iss
C
oss
C
rss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
35
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
33
5.7
17
23
15
99
30
69
2430
1200
250
Max. Units
Conditions
–––
S
V
DS
= 15V, I
D
= 12A
50
I
D
= 12A
8.5
nC V
DS
= 24V
25
V
GS
= 4.5V
34
V
GS
= 0V, V
DS
= 10V
–––
V
DD
= 15V
–––
I
D
= 12A
ns
–––
R
G
= 6.8Ω
–––
V
GS
= 4.5V
–––
V
GS
= 0V
–––
V
DS
= 15V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
E
AS
I
AR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
–––
–––
Max.
310
30
Units
mJ
A
Diode Characteristics
Symbol
I
S
I
SM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
–––
–––
–––
–––
–––
–––
––– 110
A
–––
0.75
0.65
48
62
49
67
120
1.3
–––
72
92
74
100
V
ns
nC
ns
nC
V
SD
t
rr
Q
rr
t
rr
Q
rr
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
T
J
= 25°C, I
S
= 12A, V
GS
= 0V
T
J
= 125°C, I
S
= 12A, V
GS
= 0V
T
J
= 25°C, I
F
= 12A, V
R
=15V
di/dt = 100A/µs
T
J
= 125°C, I
F
= 12A, V
R
=15V
di/dt = 100A/µs
2
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IRLR/U8203
1000
VGS
TOP
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
1000
ID , Drain-to-Source Current (A)
100
ID , Drain-to-Source Current (A)
100
VGS
10V
4.5V
3.7V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
2.5V
10
10
2.5V
20µs PULSE WIDTH
Tj = 25°C
1
0.1
1
10
100
1
0.1
1
20µs PULSE WIDTH
Tj = 175°C
10
100
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
1000.00
2.0
I
D
= 30A
ID , Drain-to-Source Current
(Α
)
1.5
R
DS(on)
, Drain-to-Source On Resistance
100.00
T J = 25°C
T J = 175°C
(Normalized)
1.0
0.5
10.00
2.0
3.0
VDS = 15V
20µs PULSE WIDTH
4.0
5.0
0.0
-60
-40
-20
0
20
40
60
80
V
GS
= 10V
100 120 140 160 180
T
J
, Junction Temperature
(
°
C)
VGS, Gate-to-Source Voltage (V)
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
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3
IRLR/U8203
10000
VGS = 0V,
f = 1 MHZ
Ciss = C + C , C
gs
gd
ds SHORTED
Crss = C
gd
Coss = C + C
ds gd
6
I
D
=
12A
5
V
DS
= 24V
V
DS
= 15V
V
DS
= 6V
C, Capacitance(pF)
Ciss
Coss
1000
V
GS
, Gate-to-Source Voltage (V)
4
3
2
Crss
1
100
1
10
100
0
0
10
20
30
40
VDS , Drain-to-Source Voltage (V)
Q
G
, Total Gate Charge (nC)
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
OPERATION IN THIS AREA
LIMITED BY R DS (on)
100
T
J
= 175
°
C
10
ID, Drain-to-Source Current (A)
I
SD
, Reverse Drain Current (A)
100
100µsec
1
T
J
= 25
°
C
10
Tc = 25°C
Tj = 175°C
Single Pulse
1
0
1
10
1msec
10msec
0.1
0.2
0.4
0.6
0.8
1.0
V
GS
= 0 V
1.2
1.4
100
1000
V
SD
,Source-to-Drain Voltage (V)
VDS , Drain-toSource Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
Fig 8.
Maximum Safe Operating Area
4
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IRLR/U8203
120
LIMITED BY PACKAGE
100
V
DS
V
GS
R
G
R
D
D.U.T.
+
80
-
V
DD
I
D
, Drain Current (A)
4.5V
60
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
40
Fig 10a.
Switching Time Test Circuit
V
DS
90%
20
0
25
50
75
100
125
150
175
T
C
, Case Temperature
( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
(Z
thJC
)
1
D = 0.50
Thermal Response
0.20
0.10
0.1
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
0.0001
0.001
0.01
0.01
0.00001
Notes:
1. Duty factor D =
2. Peak T
J
P
DM
t
1
t
2
+T
C
1
t
1
/ t
2
= P
DM
x Z
thJC
0.1
t
1
, Rectangular Pulse Duration (sec)
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
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