CMHD4448 datasheet, PDF - EEWORLD Datasheet

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CMHD4448: DescriptionHIGH SPEED SWITCHING DIODE; CategoryDiscrete semiconductor diode; File Size53KB，2 Pages; ManufacturerCentral Semiconductor

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CMHD4448 Overview

HIGH SPEED SWITCHING DIODE

CMHD4448 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	SOD-123, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
application	GENERAL PURPOSE
Minimum breakdown voltage	100 V
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
Maximum forward voltage (VF)	1 V
JESD-30 code	R-PDSO-G2
JESD-609 code	e0
Maximum non-repetitive peak forward current	1 A
Number of components	1
Phase	1
Number of terminals	2
Maximum operating temperature	150 °C
Minimum operating temperature	-65 °C
Maximum output current	0.25 A
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Maximum power dissipation	0.4 W
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	100 V
Maximum reverse current	50 µA
Maximum reverse recovery time	0.004 µs
Reverse test voltage	20 V
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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CMHD4448

HIGH SPEED

SWITCHING DIODE

Central

DESCRIPTION:

TM

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR CMHD4448

type is a ultra-high speed silicon switching diode

manufactured by the epitaxial planar process,

epoxy molded in a SOD-123 surface mount

package, designed for high speed switching

applications.

Marking code is C48.

SOD-123 CASE

MAXIMUM RATINGS (TA=25°C unless otherwise noted)

SYMBOL

Continuous Reverse Voltage

Peak Repetitive Reverse Voltage

Average Rectified Current

Forward Surge Current, tp<1s, TC=25°C

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

VR

VRRM

IO

IFSM

PD

TJ,Tstg

Θ

JA

75

100

150

500

400

-65 to +150

312.5

UNITS

V

mA

mW

°C

°C/W

ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)

SYMBOL

IR

VBR

VF

CT

trr

TEST CONDITIONS

VR=20V

VR=20V, TC=25°C

VR=75V

IR=100µA

IF=5.0mA

IF=10mA

VR=0, f=1 MHz

VR=6.0V, IF=10mA, IR=1.0mA, RL=100Ω

MIN

MAX

25

50

5.0

100

0.62

0.72

1.0

4.0

UNITS

nA

µA

V

pF

ns

R2 ( 2-November 2001)

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