CMPT3646 datasheet, PDF - EEWORLD Datasheet

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CMPT3646: DescriptionNPN SILICON TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size43KB，2 Pages; ManufacturerCentral Semiconductor

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CMPT3646 Overview

NPN SILICON TRANSISTOR

CMPT3646 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
package instruction	SMALL OUTLINE, R-PDSO-G3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.2 A
Collector-emitter maximum voltage	15 V
Configuration	SINGLE
Minimum DC current gain (hFE)	15
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	350 MHz
Maximum off time (toff)	28 ns
Maximum opening time (tons)	18 ns
Base Number Matches	1

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CMPT3646

NPN SILICON TRANSISTOR

Central

DESCRIPTION:

TM

Semiconductor Corp.

SOT-23 CASE

MAXIMUM RATINGS

(TA=25

o

C)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCES

VCEO

VEBO

IC

PD

TJ,Tstg

Θ

JA

The CENTRAL SEMICONDUCTOR

CMPT3646 type is an NPN Silicon Transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for high current, ultra high speed

switching applications.

Marking code is C2R.

40

15

5.0

200

350

-65 to +150

357

UNITS

V

mA

mW

o

C

o

C/W

ELECTRICAL CHARACTERISTICS

(TA=25

o

C unless otherwise noted)

SYMBOL

ICES

BVCBO

BVCES

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

TEST CONDITIONS

VCE=20V

VCE=20V, TA=65

o

C

IC=100µA

IC=10µA

IC=10mA

IE=100µA

IC=30mA, IB=3.0mA

IC=30mA, IB=3.0mA, TA=65

o

C

IC=100mA, IB=10mA

IC=300mA, IB=30mA

IC=30mA, IB=3.0mA

IC=100mA, IB=10mA

IC=300mA, IB=30mA

VCE=0.4V, IC=30mA

VCE=0.5V, IC=100mA

MIN

MAX

0.5

3.0

UNITS

µA

V

40

15

5.0

0.20

0.30

0.28

0.50

0.95

1.20

1.70

120

0.75

30

25

170

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