CMPT4033 datasheet, PDF - EEWORLD Datasheet

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CMPT4033: DescriptionPNP SILICON TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size42KB，2 Pages; ManufacturerCentral Semiconductor

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CMPT4033 Overview

PNP SILICON TRANSISTOR

CMPT4033 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Central Semiconductor
package instruction	PLASTIC PACKAGE-3
Contacts	3
Reach Compliance Code	_compli
ECCN code	EAR99
Maximum collector current (IC)	0.5 A
Collector-emitter maximum voltage	80 V
Configuration	SINGLE
Minimum DC current gain (hFE)	70
JESD-30 code	R-PDSO-G3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.35 W
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	100 MHz

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Central

CMPT4033

PNP SILICON TRANSISTOR

DESCRIPTION

TM

Semiconductor Corp.

The CENTRAL SEMICONDUCTOR

CMPT4033 type is an PNP silicon transistor

manufactured by the epitaxial planar process,

epoxy molded in a surface mount package,

designed for very high current, general

purpose amplifier applications.

Marking Code is C4A.

SOT-23 CASE

MAXIMUM RATINGS

(TA=25oC)

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Current (Peak)

Power Dissipation

Operating and Storage

Junction Temperature

Thermal Resistance

SYMBOL

VCBO

VCEO

VEBO

IC

ICM

PD

TJ,Tstg

Θ

JA

UNITS

V

mA

A

mW

oC

oC/W

80

5.0

500

1.0

350

-65 to +150

357

ELECTRICAL CHARACTERISTICS

(TA=25oC unless otherwise noted)

SYMBOL

ICBO

IEBO

BVCBO

BVCEO

BVEBO

VCE(SAT)

VBE(SAT)

hFE

fT

Cob

Cib

TEST CONDITIONS

VCB=60V

VEB=5.0V

IC=10µA

IC=10mA

IE=10µA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

IC=150mA, IB=15mA

IC=500mA, IB=50mA

VCE=5.0V, IC=0.1mA

VCE=5.0V, IC=100mA

VCE=5.0V, IC=500mA

VCE=10V, IC=50mA, f=1.0MHz

VCB=10V, IE=0, f=1.0MHz

VEB=0.5V, IC=0, f=1.0MHz

MIN

MAX

50

10

UNITS

nA

V

80

5.0

0.15

0.50

0.90

1.10

75

100

70

100

300

20

110

MHz

pF

174

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