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2N1762

Description
Transistor
CategoryDiscrete semiconductor    The transistor   
File Size391KB,4 Pages
ManufacturerGPD Optoelectronics Corp
Download Datasheet Parametric View All

2N1762 Overview

Transistor

2N1762 Parametric

Parameter NameAttribute value
package instruction,
Reach Compliance Codeunknow
Maximum collector current (IC)3 A
ConfigurationSingle
Minimum DC current gain (hFE)60
Maximum operating temperature95 °C
Polarity/channel typePNP
Maximum power dissipation(Abs)28 W
surface mountNO
Nominal transition frequency (fT)0.015 MHz
Base Number Matches1
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