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Datasheet> All Categories > Discrete semiconductor> The transistor> 2SC4552-M
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2SC4552-M

Description
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size161KB，6 Pages
ManufacturerNEC Electronics
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2SC4552-M Overview

Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3

2SC4552-M Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerNEC Electronics
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Shell connectionISOLATED
Maximum collector current (IC)15 A
Collector-emitter maximum voltage60 V
ConfigurationSINGLE
Minimum DC current gain (hFE)100
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)120 MHz
Base Number Matches1

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DATA SHEET
SILICON POWER TRANSISTOR
2SC4552
NPN SILICON EPITAXIAL TRANSISTOR
FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power transistor developed for high-speed
switching and features low V
CE(sat)
and high h
FE
. This transistor is
ideal for use in drivers such as DC/DC converters and actuators.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting
cost.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High h
FE
and low V
CE(sat)
:
h
FE
≥
100 (V
CE
= 2 V, I
C
= 3 A)
V
CE(sat)
≤
0.3 V (I
C
= 8 A, I
B
= 0.4 A)
• Mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)
°
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
Base current (DC)
Total power dissipation
Total power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
*
I
B(DC)
P
T
(Tc = 25°C)
P
T
(Ta = 25°C)
T
j
T
stg
Ratings
100
60
7.0
15
30
7.5
30
2.0
150
−55
to +150
Unit
V
V
V
A
A
A
W
W
°C
°C
Electrode Connection
1. Base
2. Collector
3. Emitter
* PW
≤
300
µ
s, duty cycle
≤
10%
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. D15598EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
©
2002
1998

2SC4552-M Related Products

2SC4552-M 2SC4552-K-AZ 2SC4552-L-AZ 2SC4552-M-AZ 2SC4552-L 2SC4552-AZ 2SC4552-K
Description Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3 Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, PLASTIC PACKAGE-3
Maker NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics NEC Electronics
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Contacts 3 3 3 3 3 3 3
Reach Compliance Code compliant unknown unknown unknown compliant unknown compliant
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Shell connection ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED ISOLATED
Maximum collector current (IC) 15 A 15 A 15 A 15 A 15 A 15 A 15 A
Collector-emitter maximum voltage 60 V 60 V 60 V 60 V 60 V 60 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 100 200 150 100 150 60 200
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1 1 1 1
Number of terminals 3 3 3 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
surface mount NO NO NO NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz 120 MHz
Base Number Matches 1 1 1 1 1 1 1

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