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3N251-E4/45

Description
diode bridge 1.5A 800v kbpm
CategoryDiscrete semiconductor    diode   
File Size90KB,4 Pages
ManufacturerVishay
Websitehttp://www.vishay.com
Download Datasheet Parametric View All

3N251-E4/45 Overview

diode bridge 1.5A 800v kbpm

3N251-E4/45 Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
package instructionR-PSIP-T4
Contacts4
Manufacturer packaging codeCASE KBPM
Reach Compliance Codeunknow
Other featuresUL RECOGNIZED
Minimum breakdown voltage800 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-T4
JESD-609 codee4
Maximum non-repetitive peak forward current60 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current1.5 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Certification statusNot Qualified
Maximum repetitive peak reverse voltage800 V
surface mountNO
Terminal surfaceSilver (Ag)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
Base Number Matches1
KBP005M thru KBP10M, 3N246 thru 3N252
Vishay General Semiconductor
Glass Passivated Single-Phase Bridge Rectifier
FEATURES
• UL recognition file number E54214
• Ideal for printed circuit board
• High surge current capability
~
~
+
Case Style KBPM
+
~
~
e4
• High case dielectric strength
• Solder dip 260 °C, 40 s
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
TYPICAL APPLICATIONS
General purpose use in ac-to-dc bridge full wave
rectification for switching power supply, home
appliances, office equipment, and telecommunication
applications.
MECHANICAL DATA
Case:
KBPM
Epoxy meets UL 94V-0 flammability rating
Terminals:
Silver plated leads, solderable per
J-STD-002 and JESD22-B102
E4 suffix for consumer grade
Polarity:
As marked on body
PRIMARY CHARACTERISTICS
I
F(AV)
V
RRM
I
FSM
I
R
V
F
T
J
max.
1.5 A
50 V to 1000 V
60 A
5 µA
1.0 V
150 °C
MAXIMUM RATINGS
(T
A
= 25 °C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse
Maximum RMS voltage
(1)
(1)
SYMBOL
voltage
(1)
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
I
2
t
T
J
, T
STG
KBP
005M
3N246
50
35
50
KBP
01M
3N247
100
70
100
KBP
02M
3N248
200
140
200
KBP
04M
3N249
400
280
400
1.5
60
40
10
- 55 to + 150
KBP
06M
3N250
600
420
600
KBP
08M
3N251
800
560
800
KBP
10M
3N252
1000
700
1000
UNIT
V
V
V
A
A
A
2
s
°C
Maximum DC blocking voltage
Maximum average forward output rectified
current at T
A
= 40 °C
Peak forward surge current
single half sine-wave
(1)
Rating for fusing (t < 8.3 ms)
Operating junction and storage temperature range
(1)
Note:
(1) JEDEC registered values
T
A
= 25 °C
T
J
= 150 °C
Document Number: 88531
Revision: 15-Apr-08
For technical questions within your region, please contact one of the following:
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
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