EEWORLDEEWORLDEEWORLD

Part Number

Search

3LN02SP

Description
Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SPA, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size28KB,4 Pages
ManufacturerSANYO
Websitehttp://www.semic.sanyo.co.jp/english/index-e.html
Download Datasheet Parametric View All

3LN02SP Overview

Small Signal Field-Effect Transistor, 0.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SPA, 3 PIN

3LN02SP Parametric

Parameter NameAttribute value
Objectid1543853921
package instructionIN-LINE, R-PSIP-T3
Contacts3
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (Abs) (ID)0.3 A
Maximum drain current (ID)0.3 A
Maximum drain-source on-resistance1.2 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PSIP-T3
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.25 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Ordering number : ENN6550
3LN02SP
N-Channel Silicon MOSFET
3LN02SP
Ultrahigh-Speed Switching Applications
Features
Package Dimensions
unit : mm
2180
4.0
Low ON resistance.
Ultrahigh-speed switching.
2.5V drive.
[3LN02SP]
3.0
2.2
0.4
0.5
0.6
0.4
1.8
15.0
0.4
1 2
1.3
0.7
3
1.3
Specifications
Absolute Maximum Ratings
at Ta=25°C
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
Drain Current (DC)
Drain Current (Pulse)
Allowable Power Dissipation
Channel Temperature
Storage Temperature
Symbol
VDSS
VGSS
ID
IDP
PD
Tch
Tstg
PW≤10µs, duty cycle≤1%
Conditions
3.0
3.8nom
1 : Source
2 : Drain
3 : Gate
SANYO : SPA
Ratings
30
±10
0.3
1.2
0.25
150
--55 to +150
Unit
V
V
A
A
W
°C
°C
Electrical Characteristics
at Ta=25°C
Parameter
Drain-to-Source Breakdown Voltage
Zero-Gate Voltage Drain Current
Gate-to-Sourse Leakage Current
Cutoff Voltage
Forward Transfer Admittance
Symbol
V(BR)DSS
IDSS
IGSS
VGS(off)
yfs
Conditions
ID=1mA, VGS=0
VDS=30V, VGS=0
VGS=±8V, VDS=0
VDS=10V, ID=100µA
VDS=10V, ID=150mA
Ratings
min
30
10
±10
0.4
0.4
0.56
1.3
typ
max
Unit
V
µA
µA
V
S
Marking : YD
0.7
Continued on next page.
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
71000 TS IM TA-2953 No.6550-1/4
How to cultivate children's interest in Linux from an early age?
[b]Child: [/b][color=#000][font=宋体, Arial, Helvetica, san-serif]Dad, dad, why is the cartoon I watched yesterday gone from my computer? [/font][/color] [b]You: [/b][color=#000][font=宋体, Arial, Helveti...
奋斗之路 Linux and Android
Semiconductor diode
Rectifier: Because the forward operating current of the rectifier is large, the process mostly adopts a junction structure with large junction capacitance. Therefore, the operating frequency of the re...
hodenshi Microchip MCU
Chinese manual for the FLASH memory chip W25X16 suitable for font library
W25X16 Chinese data [[i] This post was last edited by richgood on 2011-2-22 09:26 [/i]]...
richgood NXP MCU
Who has used the sensor to detect "ultraviolet light"?
I don't know if anyone has used a sensor for detecting "ultraviolet rays". Please recommend it. It can be used in occasions, outdoors, to detect the intensity of ultraviolet rays. It is very small and...
dingshidong Analog electronics
Looking at the living space and value of djyos from wince——A dialogue with Mr. Dai
I met Mr. Dai from Chengdu, thanks to QQ, through djyos. Dai: How is your djyos going now? Me: I am working hard. That’s how our conversation started. Through QQ chat, I know that Mr. Dai is a dedicat...
jswx15 Embedded System

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2054  2559  296  319  1628  42  52  6  7  33 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号