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3SK126YTE85L

Description
TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal
CategoryDiscrete semiconductor    The transistor   
File Size125KB,4 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
Download Datasheet Parametric View All

3SK126YTE85L Overview

TRANSISTOR VHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET, FET RF Small Signal

3SK126YTE85L Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
Reach Compliance Codeunknow
Shell connectionSOURCE
ConfigurationSINGLE
Minimum drain-source breakdown voltage15 V
Maximum drain current (ID)0.03 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
Maximum feedback capacitance (Crss)0.05 pF
highest frequency bandVERY HIGH FREQUENCY BAND
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Operating modeDUAL GATE, ENHANCEMENT MODE
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)240
Polarity/channel typeN-CHANNEL
Minimum power gain (Gp)20 dB
Certification statusNot Qualified
surface mountYES
Terminal surfaceTIN LEAD
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
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