TN-46-16: 512Mb Mobile DDR: 95nm to 78nm
Introduction
Technical Note
512Mb Mobile DDR: 95nm to 78nm Product Transition Guide
Introduction
This document describes critical product differences associated with the 512Mb Mobile
(LP) DDR SDRAM product as it transitions from 95nm process technology to 78nm
process technology. Micron makes every effort to ensure that new replacement products
have full functional compatibility with previous products. This is accomplished through
design, ATE characterization, and target system validation when possible. It is therefore
unlikely that a system that has been designed with a Micron LP DDR SDRAM product
will have any problems with a Micron replacement product. Micron does recommend,
however, that the target system design be fully evaluated with the final version of the
new product prior to conversion.
Part Number Transition
Examples of replacement part numbers are shown in Table 1. These numbers are
reflected in the data sheet for the replacement product.
Table 1:
Part Number Replacement Examples
95nm Part Number
MT46H16M32LFCM-6
MT46H16M32LFCM-6 IT
MT46H16M32LFCM-75
MT46H16M32LFCM-75 IT
MT46H32M16LFCK-6
MT46H32M16LFCK-6 IT
MT46H32M16LFCK-75
MT46H32M16LFCK-75 IT
78nm Part Number
MT46H16M32LFCM-6:B
MT46H16M32LFCM-6 IT:B
MT46H16M32LFCM-6:B
MT46H16M32LFCM-6 IT:B
MT46H32M16LFBF-6:B
MT46H32M16LFBF-6 IT:B
MT46H32M16LFBF-6:B
MT46H32M16LFBF-6 IT:B
Status Read Register for 78nm Product
The status read register (SRR) has been added to the 78nm product. It is used to read the
manufacturer ID, revision ID, refresh multiplier, width, type, and density of the Mobile
SDRAM, as shown in Figure 1 on page 2. The information made available from this read-
only register can assist the component package manufacturer. It can also be useful for
product operation in the target application. The SRR is read via the LOAD MODE
REGISTER command with BA0 = 1 and BA1 = 0. Consult the 78nm product data sheet for
a full description of the SRR operation.
PDF: 09005aef82dfb176 / Source: 09005aef82dfb194
tn4616_512_mddr_95_to_78nm_t37_47m.fm - Rev. B 9/07 EN
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are for evaluation and reference purposes only and are subject to change by
Micron without notice. Products are only warranted by Micron to meet Micron’s production data sheet specifications. All
information discussed herein is provided on an “as is” basis, without warranties of any kind.
TN-46-16: 512Mb Mobile DDR: 95nm to 78nm
AC Timing and DC Specification Differences
Figure 1:
Status Read Register
DQ31...DQ16 DQ15 DQ14 DQ13 DQ12 DQ11 DQ10 DQ9 DQ8 DQ7 DQ6 DQ5 DQ4 DQ3 DQ2 DQ1
DQ0
I/O
bus
(CLK L->H edge)
31...16
Reserved
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
Density
Type Width Refresh Rate
Revision ID
Manufacturer ID
Status
register (Sx)
S15 S14 S13
0
0
0
0
1
0
0
1
0
1
1
0
1
1
1
1
0
0
1
1
0
1
0
1
Density
128Mb
256Mb
512Mb
1,024Mb
Reserved
Reserved
Reserved
Reserved
S3
0
0
0
0
0
0
0
0
1
1
1
1
S2
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
S1
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
S0
0
1
0
1
0
1
0
1
0
1
0
1
0
1
0
1
Manufacturer ID
Reserved
Samsung
Infineon
Elpida
Reserved
Reserved
Reserved
Reserved
Winbond
ESMT
NVM
Reserved
Reserved
Reserved
Reserved
Micron
S12
0
1
Device Type
LP DDR
LP DDR2
S11
0
1
Device Width
16
bits
32
bits
1
1
1
1
S10
0
0
0
0
1
1
1
1
S9
0
0
1
1
0
0
1
1
S8
0
1
0
1
0
1
0
1
Refresh Multiplier
4X
4X
4X
2X
1X
0.5X
0.25X
0.25X
S7
0
...
X
S6
0
...
X
S5
0
...
X
S4
0
...
X
Revision ID
The manufacturer’s revision number starts at
“0000”
and increments
by “0001”
each time a
change
in the
specification (AC timings or feature set), IBIS (pull-
up or pull-down
characteristics),
or process occurs.
AC Timing and DC Specification Differences
The 78nm product supports the same speed grades as the 95nm product and will meet
or exceed all timing parameters. The 78nm product also meets or exceeds all JEDEC-
standard LP DDR I/O level parameters as does the 95nm product.
Some DC specifications may vary between the 95nm and 78nm products. Consult the
product data sheets for specific values.
PDF: 09005aef82dfb176 / Source: 09005aef82dfb194
tn4616_512_mddr_95_to_78nm_t37_47m.fm - Rev. B 9/07 EN
2
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
TN-46-16: 512Mb Mobile DDR: 95nm to 78nm
Package Differences
Package Differences
The 95nm, x16 and x32 products use SAC305 package solder ball composition, as shown
in Figure 2.
Both the x16 (60-ball) and the x32 (90-ball) packages for the 78nm product use SAC105
solder ball composition. This aligns with the industry trend toward SAC105 composition
for enhanced drop test performance. The surface mount conditions for SAC105 are the
same as for SAC305.
In addition, the 78nm, x16 product offers a smaller, 8mm x 9mm package outline to
conserve application board space, as shown in Figure 3 on page 4. The ball assignments
for both 78nm packages are JEDEC compliant.
Figure 2:
Previous 95nm, x16, 10mm x 11mm, 60-ball VFBGA
0.65 ±0.05
Seating
plane
0.1 A
A
Solder ball material:
SAC305 (96.5% Sn, 3% Ag, 0.5% Cu)
60X Ø0.45
Dimensions apply
to solder balls
post-reflow. The
pre-reflow balls
are Ø0.42 on Ø0.4
SMD ball pads.
9
8
7
10 ±0.1
5 ±0.05
3
2
1
Substrate material: plastic laminate
Mold compound: epoxy novolac
Ball A1 ID
Ball A1 ID
A
B
5.75 ±0.05
3.6
C
D
7.2
E
F
G
H
11.5 ±0.1
0.8 TYP
J
K
0.8 TYP
6.4
3.2
1.0 MAX
Notes:
1. Dimensions are in millimeters.
PDF: 09005aef82dfb176 / Source: 09005aef82dfb194
tn4616_512_mddr_95_to_78nm_t37_47m.fm - Rev. B 9/07 EN
3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
TN-46-16: 512Mb Mobile DDR: 95nm to 78nm
Die Bond Pad Order Changes
Figure 3:
New 78nm, x16, 8 x 9mm, 60-ball VFBGA
0.65 ±0.05
0.3 ±0.025
Seating
plane
0.1 A
A
Solder ball material:
SAC105 (98.5% Sn, 1% Ag, 0.5% Cu)
8 ±0.1
4 ±0.05
9
8
7
3
2
1
A
B
60x Ø0.45
Dimensions apply
to solder balls
post-reflow. The
pre-reflow balls are
Ø0.42 on Ø0.4 SMD
ball pads.
Substrate material: plastic laminate
Mold compound: epoxy novolac
Ball A1 ID
Micron logo
to be lased
ball A1 ID
3.6
C
D
E
4.5 ±0.05
7.2
F
G
H
9 ±0.1
0.8 TYP
J
K
0.8 TYP
6.4
3.2
1.0 MAX
Notes:
1. Dimensions are in millimeters.
Die Bond Pad Order Changes
The 78nm, JEDEC-standard bond pad order is noticeably different from the 95nm bond
pad order. An example of the differences for the x16 double-sided configuration is
shown in Table 2 on page 5.
The JEDEC pad ordering guidelines do not specify exact placement requirements.
Therefore, they do not guarantee bonding compatibility among vendors. Compatibility
can be verified by direct comparison of die data sheet bond pad information.
PDF: 09005aef82dfb176 / Source: 09005aef82dfb194
tn4616_512_mddr_95_to_78nm_t37_47m.fm - Rev. B 9/07 EN
4
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
TN-46-16: 512Mb Mobile DDR: 95nm to 78nm
Die Bond Pad Order Changes
Table 2:
Bond Pad Order Comparison
1
95nm, Double-Sided x16
V
DD
V
SS
V
DD
V
SS
V
DD
BOND_OPT
V
SS
CS#
A0
A1
A2
A3
A4
A5
A6
CKE
CAS#
RAS#
V
DD
V
SS
BA1
BA0
WE#
A7
A8
A9
A10
A11
A12
V
SS
V
DD
V
SS
V
DD
High-Z
V
SS
V
DD
V
DD
V
SS
TQ
V
DD
Q
V
SS
Q
V
DD
Q
V
SS
Q
V
DD
V
SS
DQ15
DQ14
V
DD
Q
V
SS
Q
DQ13
DQ12
DQ11
DQ10
V
DD
Q
V
SS
Q
DQ9
DQ8
UDQS
UDM
V
DD
BOND_OPT
V
SS
V
SS
CK#
CK
V
DD
V
SS
CK#
CK
V
DD
V
SS
V
DD
LDM
LDQS
DQ7
DQ6
DQ5
DQ4
DQ3
DQ2
DQ1
DQ0
V
SS
V
DD
V
SS
Q
V
DD
Q
V
SS
Q
V
DD
Q
TEST
High-Z
V
SS
78nm, Double-Sided x16
V
SS
V
DD
TEST
High-Z
V
SS
BOND_OPT
V
DD
A4
A5
A6
A7
A8
A9
A11
A12
V
DD
V
SS
CKE
WE#
CAS#
RAS#
CS#
BA1
BA0
A10/AP
A0
A1
A2
A3
V
DD
V
SS
V
DD
V
SS
V
SS
V
DD
TQ
V
DD
Q
V
SS
Q
V
SS
Q
V
DD
Q
V
DD
Q
V
SS
Q
DQ15
DQ14
DQ13
DQ12
V
SS
Q
V
DD
Q
DQ11
DQ10
DQ9
DQ8
V
DD
Q
V
SS
Q
UDQS
UDM
V
SS
V
DD
CK
CK#
V
DD
V
SS
LDM
LDQS
V
SS
Q
V
DD
Q
DQ7
DQ6
DQ5
DQ4
V
DD
Q
V
SS
Q
DQ3
DQ2
DQ1
DQ0
V
SS
Q
V
DD
Q
V
DD
Q
V
SS
Q
V
SS
Q
V
DD
Q
V
DD
V
SS
Notes:
1. Blue cells indicate bond pad order differences.
For high-speed applications that use the single-sided configuration, special bonding
recommendations are provided in the part-specific die data sheet.
PDF: 09005aef82dfb176 / Source: 09005aef82dfb194
tn4616_512_mddr_95_to_78nm_t37_47m.fm - Rev. B 9/07 EN
5
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2007 Micron Technology, Inc. All rights reserved.
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