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MT29F8G08AAAWP-ET:A TR

Description
IC flash 8gbit 48tsop
Categorystorage   
File Size2MB,81 Pages
ManufacturerMicron
Websitehttp://www.micron.com/
Environmental Compliance  
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MT29F8G08AAAWP-ET:A TR Overview

IC flash 8gbit 48tsop

MT29F8G08AAAWP-ET:A TR Parametric

Parameter NameAttribute value
Datasheets
MT29FxG08xAA
Product Photos
MT29F4G-48TSOP
Product Training Modules
Introduction to NAND Flash Memory - Part 1
Introduction to NAND Flash Memory - Part 2
Introduction to NAND Flash Memory - Part 3
Standard Package1
CategoryIntegrated Circuits (ICs)
FamilyMemory
PackagingCut Tape (CT)
Format - MemoryFLASH
Memory TypeFLASH - NAND
Memory Size8G (1G x 8)
Speed-
InterfaceParallel
Voltage - Supply2.7 V ~ 3.6 V
Operating Temperature-40°C ~ 85°C
Package / Case48-TFSOP (0.724", 18.40mm Width)
Supplier Device Package48-TSOP I
Other Names557-1372-1MT29F8G08AAAWPETATR
4Gb, 8Gb, and 16Gb x8 NAND Flash Memory
Features
NAND Flash Memory
MT29F4G08AAA, MT29F8G08BAA, MT29F8G08DAA, MT29F16G08FAA
Features
• Single-level cell (SLC) technology
• Organization
Page size x8: 2,112 bytes (2,048 + 64 bytes)
Block size: 64 pages (128K + 4K bytes)
Plane size: 2,048 blocks
Device size: 4Gb: 4,096 blocks; 8Gb: 8,192 blocks;
16Gb: 16,384 blocks
• READ performance
Random READ: 25µs (MAX)
Sequential READ: 25ns (MIN)
• WRITE performance
PROGRAM PAGE: 220µs (TYP)
BLOCK ERASE: 1.5ms (TYP)
• Data retention: 10 years
• Endurance: 100,000 PROGRAM/ERASE cycles
• First block (block address 00h) guaranteed to be
valid up to 1,000 PROGRAM/ERASE cycles
1
• Industry-standard basic NAND Flash command set
• Advanced command set:
PROGRAM PAGE CACHE MODE
PAGE READ CACHE MODE
One-time programmable (OTP) commands
Two-plane commands
Interleaved die operations
READ UNIQUE ID (contact factory)
READ ID2 (contact factory)
• Operation status byte provides a software method of
detecting:
Operation completion
Pass/fail condition
Write-protect status
• Ready/busy# (R/B#) signal provides a hardware
method of detecting operation completion
• WP# signal: write protect entire device
• RESET required after power-up
• INTERNAL DATA MOVE operations supported
within the plane from which data is read
Figure 1:
48-Pin TSOP Type 1
Options
• Density
2
4Gb (single die)
8Gb (dual-die stack 1 CE#)
8Gb (dual-die stack 2 CE#)
16Gb (quad-die stack)
• Device width: x8
• Configuration
# of die
# of CE# # of R/B#
I/O
1
1
1
Common
2
1
1
Common
2
2
2
Common
4
2
2
Common
• V
CC
: 2.7–3.6V
• Package
48 TSOP type I (lead-free plating)
48 TSOP type I OCPL
3
(lead-free plating)
• Operating temperature
Commercial (0°C to +70°C)
Extended (–40°C to +85°C)
4
Notes: 1. For further details, see “Error Management”
on page 58.
2. For part numbering and markings, see
Figure 2 on page 2.
3. OCPL = off-center parting line.
4. For ET devices, contact factory.
1
Micron Technology, Inc., reserves the right to change products or specifications without notice.
©2006 Micron Technology, Inc. All rights reserved.
PDF: 09005aef81b80e13/Source: 09005aef81b80eac
4gb_nand_m40a__1.fm - Rev. B 2/07 EN
Products and specifications discussed herein are subject to change by Micron without notice.
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