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EFMT524M159

Description
Insulated Gate Bipolar Transistor, 64A I(C), 500V V(BR)CES
CategoryDiscrete semiconductor    The transistor   
File Size351KB,5 Pages
ManufacturerGentron Corp.
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EFMT524M159 Overview

Insulated Gate Bipolar Transistor, 64A I(C), 500V V(BR)CES

EFMT524M159 Parametric

Parameter NameAttribute value
Objectid101607046
package instruction,
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)64 A
Collector-emitter maximum voltage500 V
Gate-emitter maximum voltage25 V
Number of components1
Maximum operating temperature150 °C
Maximum power dissipation(Abs)300 W
VCEsat-Max2.4 V
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