3MN03SF datasheet, PDF - EEWORLD Datasheet

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3MN03SF: DescriptionSmall Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SSFP, 3 PIN; CategoryDiscrete semiconductor The transistor; File Size29KB，4 Pages; ManufacturerSANYO; Websitehttp://www.semic.sanyo.co.jp/english/index-e.html

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3MN03SF Overview

Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SSFP, 3 PIN

3MN03SF Parametric

Parameter Name	Attribute value
package instruction	SMALL OUTLINE, R-PDSO-F3
Contacts	3
Reach Compliance Code	unknow
ECCN code	EAR99
Maximum collector current (IC)	0.03 A
Collector-emitter maximum voltage	20 V
Configuration	SINGLE
Minimum DC current gain (hFE)	60
JESD-30 code	R-PDSO-F3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.15 W
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
transistor applications	AMPLIFIER
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
Base Number Matches	1

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Ordering number : EN8651A

3MN03SF

SANYO Semiconductors

DATA SHEET

NPN Epitaxial Planar Silicon Transistor

3MN03SF

Features

•

High-Frequency General-Purpose

Amplifier Applications

Small package allows applied sets to be made small and thin.

Specifications

Absolute Maximum Ratings

at Ta=25°C

Parameter

Collector-to-Base Voltage

Collector-to-Emitter Voltage

Emitter-to-Base Voltage

Collector Current

Collector Dissipation

Junction Temperature

Storage Temperature

Symbol

VCBO

VCEO

VEBO

Tstg

Mounted on a ceramic board (600mm

0.8mm)

Conditions

Ratings

150

--55 to +150

Unit

°C

Electrical Characteristics

at Ta=25°C

Parameter

Collector Cutoff Current

Emitter Cutoff Current

DC Current Gain

Gain-Bandwidth Product

Reverse Transfer Capacitance

Noise Figure

Symbol

ICBO

IEBO

hFE

Cre

Conditions

VCB=10V, IE=0A

VEB=4V, IC=0A

VCE=6V, IC=1mA

VCB=6V, f=1MHz

VCE=6V, IC=1mA, f=100MHz

200

320

0.8

3.0

1.3

Ratings

min

typ

max

0.1

200

MHz

Unit

µA

Marking : WA

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

72606 / 32406 MS IM TB-00002142 / D2805AA MS IM TB-00001950 No.8651-1/4

3MN03SF

Specifications of any and all SANYO Semiconductor products described or contained herein stipulate

the performance, characteristics, and functions of the described products in the independent state,

and are not guarantees of the performance, characteristics, and functions of the described products

as mounted in the customer's products or equipment. To verify symptoms and states that cannot be

evaluated in an independent device, the customer should always evaluate and test devices mounted

in the customer's products or equipment.

SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any

and all semiconductor products fail with some probability. It is possible that these probabilistic failures

could give rise to accidents or events that could endanger human lives, that could give rise to smoke or

fire, or that could cause damage to other property. When designing equipment, adopt safety measures

so that these kinds of accidents or events cannot occur. Such measures include but are not limited to

protective circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO Semiconductor products (including technical data,services) described

or contained herein are controlled under any of applicable local export control laws and regulations, such

products must not be exported without obtaining the export license from the authorities concerned in

accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic

or mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd.

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO Semiconductor product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only; it is not

guaranteed for volume production. SANYO Semiconductor believes information herein is accurate

and reliable, but no guarantees are made or implied regarding its use or any infringements of

intellectual property rights or other rights of third parties.

This catalog provides information as of March, 2006. Specifications and information herein are subject

to change without notice.

PS No.8651-4/4

3MN03SF Related Products

	3MN03SF	3MN03SF-TL-E
Description	Small Signal Bipolar Transistor, 0.03A I(C), 20V V(BR)CEO, 1-Element, NPN, Silicon, SSFP, 3 PIN	trans npn 20v 30ma 3ssfp

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