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PH6030AL,115

Description
mosfet N-CH trench 30v lfpak
Categorysemiconductor    Discrete semiconductor   
File Size2MB,58 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
Environmental Compliance  
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PH6030AL,115 Overview

mosfet N-CH trench 30v lfpak

PH6030AL,115 Parametric

Parameter NameAttribute value
Datasheets
Computing Appl Guide
Product Photos
LFPAK-4, SOT669
Standard Package1,500
CategoryDiscrete Semiconductor Products
FamilyFETs - Single
PackagingTape & Reel (TR)
FET TypeMOSFET N-Channel, Metal Oxide
FET FeatureLogic Level Gate
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25°C79A (Tc)
Rds On (Max) @ Id, Vgs6 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id2.15V @ 1mA
Gate Charge (Qg) @ Vgs24nC @ 10V
Input Capacitance (Ciss) @ Vds1425pF @ 12V
Power - Max55W
Mounting TypeSurface Mou
Package / CaseSC-100, SOT-669, 4-LFPAK
Supplier Device PackageLFPAK56, Power-SO8
Other Names934063089115
Application Guide
Notebook Computing

PH6030AL,115 Related Products

PH6030AL,115 PH4030AL,115
Description mosfet N-CH trench 30v lfpak mosfet N-CH trench 30v lfpak
Standard Package 1,500 1,500
Category Discrete Semiconductor Products Discrete Semiconductor Products
Family FETs - Single FETs - Single
Packaging Tape & Reel (TR) Tape & Reel (TR)
FET Type MOSFET N-Channel, Metal Oxide MOSFET N-Channel, Metal Oxide
FET Feature Logic Level Gate Logic Level Gate
Drain to Source Voltage (Vdss) 30V 30V
Current - Continuous Drain (Id) @ 25°C 79A (Tc) 100A (Tc)
Rds On (Max) @ Id, Vgs 6 mOhm @ 15A, 10V 4 mOhm @ 15A, 10V
Vgs(th) (Max) @ Id 2.15V @ 1mA 2.15V @ 1mA
Gate Charge (Qg) @ Vgs 24nC @ 10V 36.6nC @ 10V
Input Capacitance (Ciss) @ Vds 1425pF @ 12V 2090pF @ 12V
Power - Max 55W 69W
Mounting Type Surface Mou Surface Mou
Package / Case SC-100, SOT-669, 4-LFPAK SC-100, SOT-669, 4-LFPAK
Supplier Device Package LFPAK56, Power-SO8 LFPAK56, Power-SO8
Other Names 934063089115 934063087115
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