SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
Surface Mount PAR
®
Transient Voltage Suppressors
High Temperature Stability and High Reliability Conditions
FEATURES
• Junction passivation optimized design passivated
anisotropic rectifier technology
• T
J
= 175 °C capability suitable for high reliability
and automotive requirement
• Available in uni-directional polarity only
• Low leakage current
• Low forward voltage drop
• High surge capability
• Meets ISO7637-2 surge specification (varied by test
condition)
• Meets MSL level 1, per J-STD-020, LF maximum peak of
245 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see
www.vishay.com/doc?99912
6600 W
5200 W
8W
10 V to 43 V
700 A
175 °C
Uni-directional
DO-218AB
DO-218AB
PRIMARY CHARACTERISTICS
V
BR
P
PPM
(10 x 1000 μs)
P
PPM
(10 x 10 000 μs)
P
D
V
WM
I
FSM
T
J
max.
Polarity
Package
11.1 V to 52.8 V
TYPICAL APPLICATIONS
Use in sensitive electronics protection against voltage
transients induced by inductive load switching and lighting,
especially for automotive load dump protection application.
MECHANICAL DATA
Case:
DO-218AB
Molding compound meets UL 94 V-0 flammability rating
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Terminals:
Matte tin plated leads, solderable
J-STD-002 and JESD 22-B102
HE3 suffix meets JESD 201 class 2 whisker test
Polarity:
Heatsink is anode
per
MAXIMUM RATINGS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
with 10/1000 μs waveform
Peak pulse power dissipation
with 10/10 000 μs waveform
Power dissipation on infinite heatsink at T
C
= 25 °C (fig. 1)
Peak pulse current with 10/1000 μs waveform
Peak forward surge current 8.3 ms single half sine-wave
Operating junction and storage temperature range
Note
(1)
Non-repetitive current pulse derated above T = 25 °C
A
P
PPM
P
D
I
PPM (1)
I
FSM
T
J
, T
STG
SYMBOL
VALUE
6600
W
5200
8.0
See next table
700
-55 to +175
W
A
A
°C
UNIT
Revision: 18-Sep-12
Document Number: 88387
1
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
MAXIMUM
REVERSE
LEAKAGE
AT V
WM
I
D
(μA)
15
15
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
10
MAXIMUM REVERSE
LEAKAGE
AT V
WM
T
J
= 175 °C
I
D
(μA)
250
250
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
150
MAX. PEAK
MAXIMUM
PULSE CURRENT CLAMPING
AT 10/1000 μs
VOLTAGE
WAVEFORM
AT I
PPM
(A)
V
C
(V)
351
388
328
363
300
332
277
307
256
284
245
270
229
254
216
239
205
226
184
204
168
186
153
170
142
157
132
145
123
136
112
124
103
114
92.4
102
86
95.1
18.8
17.0
20.1
18.2
22.0
19.9
23.8
21.5
25.8
23.2
26.9
24.4
28.8
26.0
30.5
27.6
32.2
29.2
35.8
32.4
39.4
35.5
43.0
38.9
46.6
42.1
50.1
45.4
53.5
48.4
59.0
53.3
64.3
58.1
71.4
64.5
76.7
69.4
ELECTRICAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
DEVICE
TYPE
SM8S10
SM8S10A
SM8S11
SM8S11A
SM8S12
SM8S12A
SM8S13
SM8S13A
SM8S14
SM8S14A
SM8S15
SM8S15A
SM8S16
SM8S16A
SM8S17
SM8S17A
SM8S18
SM8S18A
SM8S20
SM8S20A
SM8S22
SM8S22A
SM8S24
SM8S24A
SM8S26
SM8S26A
SM8S28
SM8S28A
SM8S30
SM8S30A
SM8S33
SM8S33A
SM8S36
SM8S36A
SM8S40
SM8S40A
SM8S43
SM8S43A
BREAKDOWN
VOLTAGE
V
BR
(V)
MIN.
11.1
11.1
12.2
12.2
13.3
13.3
14.4
14.4
15.6
15.6
16.7
16.7
17.8
17.8
18.9
18.9
20.0
20.0
22.2
22.2
24.4
24.4
26.7
26.7
28.9
28.9
31.1
31.1
33.3
33.3
36.7
36.7
40.0
40.0
44.4
44.4
47.8
47.8
MAX.
13.6
12.3
14.9
13.5
16.3
14.7
17.6
15.9
19.1
17.2
20.4
18.5
21.8
19.7
23.1
20.9
24.4
22.1
27.1
24.5
29.8
26.9
32.6
29.5
35.3
31.9
38.0
34.4
40.7
36.8
44.9
40.6
48.9
44.2
54.3
49.1
58.4
52.8
TEST
CURRENT
I
T
(mA)
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
5.0
STAND-OFF
VOLTAGE
V
WM
(V)
10.0
10.0
11.0
11.0
12.0
12.0
13.0
13.0
14.0
14.0
15.0
15.0
16.0
16.0
17.0
17.0
18.0
18.0
20.0
20.0
22.0
22.0
24.0
24.0
26.0
26.0
28.0
28.0
30.0
30.0
33.0
33.0
36.0
36.0
40
40
43
43
Note
• For all types maximum V
F
= 1.8 V at I
F
= 100 A measured on 8.3 ms single half sine-wave or equivalent square wave, duty cycle = 4 pulses
per minute maximum
Revision: 18-Sep-12
Document Number: 88387
2
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
SYMBOL
R
JC
VALUE
0.90
UNIT
°C/W
THERMAL CHARACTERISTICS
(T
C
= 25 °C unless otherwise noted)
PARAMETER
Typical thermal resistance, junction to case
ORDERING INFORMATION
(Example)
PREFERRED P/N
SM8S10AHE3/2D
(1)
Note
(1)
AEC-Q101 qualified
UNIT WEIGHT (g)
2.605
PREFERRED PACKAGE CODE
2D
BASE QUANTITY
750
DELIVERY MODE
13" diameter plastic tape and reel,
anode towards the sprocket hole
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
8.0
150
t
r
= 10 μs
Peak Value
I
PPM
6.0
Input Peak Pulse Current (%)
Power Dissipation (W)
T
J
= 25 °C
Pulse Width (t
d
) is
Defined as the Point
Where the Peak Current
Decays to 50 % of I
PPM
100
4.0
Half Value - I
PP
I
PPM
2
50
2.0
t
d
0
0
50
100
150
200
0
0
10
20
30
40
Case Temperature (°C)
t - Time (ms)
Fig. 1 -
Power Derating Curve
Fig. 3 -
Pulse Waveform
6000
10 000
4000
3000
2000
1000
1000
25
50
75
100
125
150
175
10
100
0
Case Temperature (°C)
Reverse
Surge
Power (W)
5000
Load Dump Power (W)
Pulse Width (ms) - ½ I
PP
Exponential Waveform
Fig. 2 -
Load Dump Power Characteristics
(10 ms Exponential Waveform)
Fig. 4 -
Reverse Power Capability
Revision: 18-Sep-12
Document Number: 88387
3
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
SM8S10 thru SM8S43A
www.vishay.com
Vishay General Semiconductor
100 000
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
100
Transient Thermal Impedance (°C/W)
10
R
θJA
1
R
θJC
C
J
- Junction Capacitance (pF)
10 000
Measured at Zero Bias
0.1
Measured at
Stand-Off
Voltage V
WM
1000
10
15
20
25
30
35
40
45
0.01
0.01
0.1
1
10
100
t - Pulse Width (s)
V
WM
- Reverse
Stand-Off
Voltage (V)
Fig. 5 -
Typical Transient Thermal Impedance
Fig. 6 -
Typical Junction Capacitance
PACKAGE OUTLINE DIMENSIONS
in inches (millimeters)
DO-218AB
0.628 (16.0)
0.592 (15.0)
0.539 (13.7)
0.524 (13.3)
0.116 (3.0)
0.093 (2.4)
0.413 (10.5) 0.342 (8.7)
0.374 (9.5) 0.327 (8.3)
Mounting Pad Layout
0.150 (3.8)
0.126 (3.2)
0.091 (2.3)
0.067 (1.7)
0.413 (10.5)
0.374 (9.5)
0.116 (3.0)
0.093 (2.4)
0.366 (9.3)
0.343 (8.7)
0.406 (10.3)
0.382 (9.7)
0.197 (5.0)
0.185 (4.7)
0.016 (0.4) MIN.
Lead 2/Metal Heatsink
Lead 1
0.366 (9.3)
0.343 (8.7)
0.606 (15.4)
0.583 (14.8)
0.138 (3.5)
0.098 (2.5)
0.098 (2.5)
0.059 (1.5)
0.028 (0.7)
0.020 (0.5)
Revision: 18-Sep-12
Document Number: 88387
4
For technical questions within your region:
DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Legal Disclaimer Notice
www.vishay.com
Vishay
Disclaimer
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
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operating parameters, including typical parameters, must be validated for each customer application by the customer’s
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Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
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Revision: 02-Oct-12
1
Document Number: 91000
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