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BC184_D27Z

Description
transistor npn 30v 500ma TO-92
Categorysemiconductor    Discrete semiconductor   
File Size99KB,3 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance  
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BC184_D27Z Overview

transistor npn 30v 500ma TO-92

BC184_D27Z Parametric

Parameter NameAttribute value
Datasheets
BC184
Product Photos
TO-92-3(StandardBody),TO-226_straightlead
Standard Package2,000
CategoryDiscrete Semiconductor Products
FamilyTransistors (BJT) - Single
PackagingTape & Reel (TR)
Transistor TypeNPN
Current - Collector (Ic) (Max)100mA
Voltage - Collector Emitter Breakdown (Max)30V
Vce Saturation (Max) @ Ib, Ic600mV @ 5mA, 100mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 100mA, 5V
Power - Max350mW
Frequency - Transiti150MHz
Mounting TypeThrough Hole
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device PackageTO-92-3
BC184 — Silicon NPN Small Signal Transistor
September 2007
BC184
Silicon NPN Small Signal Transistor
• BV
CEO
= 30V (Min.)
• h
FE
= 130 (Min.) @V
CE
= 5.0V, I
C
= 100mA
1
TO-92
1. Collector 2. Base 3. Emitter
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
STG
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current (DC)
Operating and Storage Junction Temperature Range
Parameter
Value
30
45
5
100
-55 ~ +150
Units
V
V
V
mA
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
T
a
=25°C unless otherwise noted
Parameter
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max.
350
2.8
125
357
Units
mW
mW/°C
°C/W
°C/W
*Device mounted on FR-4 PCB 1.6” X 1.6” X 0.06”.
© 2007 Fairchild Semiconductor Corporation
BC184 Rev. 1.0.0
1
www.fairchildsemi.com

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Description transistor npn 30v 500ma TO-92 transistor npn 30v 500ma TO-92 trans SS npn 30v 100ma TO-92 Transistor
Standard Package 2,000 2,000 2,000 -
Category Discrete Semiconductor Products Discrete Semiconductor Products Discrete Semiconductor Products -
Family Transistors (BJT) - Single Transistors (BJT) - Single Transistors (BJT) - Single -
Packaging Tape & Reel (TR) Bulk Bulk -
Transistor Type NPN NPN NPN -
Current - Collector (Ic) (Max) 100mA 100mA 100mA -
Voltage - Collector Emitter Breakdown (Max) 30V 30V 30V -
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA 600mV @ 5mA, 100mA -
DC Current Gain (hFE) (Min) @ Ic, Vce 130 @ 100mA, 5V 130 @ 100mA, 5V 130 @ 100mA, 5V -
Power - Max 350mW 350mW 350mW -
Frequency - Transiti 150MHz 150MHz 150MHz -
Mounting Type Through Hole Through Hole Through Hole -
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads TO-226-3, TO-92-3 (TO-226AA) TO-226-3, TO-92-3 (TO-226AA) -
Supplier Device Package TO-92-3 TO-92-3 TO-92-3 -
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